GAN GROWN BY HYDRIDE VAPOR-PHASE EPITAXY ON P-TYPE 6H-SIC LAYERS

6H-SiC/GaN pn-heterostructures were grown by subsequent epitaxial grow th of p-SiC by low temperature liquid phase epitaxy (LTLPE) and n-GaN by hydride vapor phase epitaxy (HVPE). For the first time, p-type epit axial layers grown on 6H-SiC wafers were used as substrates for GaN HV PE growth. The GaN layers exhibit high crystal quality which was deter mined by x-ray diffraction. The full width at a half maximum (FWHM) fo r the omega-scan rocking curve for (0002) GaN reflection was similar t o 120 arcsec. The photoluminescence spectra for these films were domin ated by band-edge emission. The FWHM of the edge PL peak at 361 nm was about 5 nm (80K).