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Results: 1-12 |
Results: 12
BLOCKING OF THERMALLY-INDUCED INTERFACE DEGRADATION IN (111)SI SIO2 BY HE/
Authors: STESMANS A AFANASEV VV REVESZ AG
Citation: A. Stesmans et al., BLOCKING OF THERMALLY-INDUCED INTERFACE DEGRADATION IN (111)SI SIO2 BY HE/, Journal of physics. Condensed matter, 10(22), 1998, pp. 367-371
OXYGEN VACANCIES IN SIO2, LAYERS AN SI PRODUCED AT HIGH-TEMPERATURE
Authors: AFANASEV VV STESMANS A REVESZ AG HUGHES HL
Citation: Vv. Afanasev et al., OXYGEN VACANCIES IN SIO2, LAYERS AN SI PRODUCED AT HIGH-TEMPERATURE, Journal of the Electrochemical Society, 145(9), 1998, pp. 3157-3160
PROPERTIES OF THE BURIED OXIDE LAYER IN SIMOX STRUCTURES
Authors: REVESZ AG HUGHES HL
Citation: Ag. Revesz et Hl. Hughes, PROPERTIES OF THE BURIED OXIDE LAYER IN SIMOX STRUCTURES, Microelectronic engineering, 36(1-4), 1997, pp. 343-350
STRUCTURAL INHOMOGENEITY AND SILICON ENRICHMENT OF BURIED SIO2 LAYERSFORMED BY OXYGEN-ION IMPLANTATION IN SILICON
Authors: AFANASEV VV STESMANS A REVESZ AG HUGHES HL
Citation: Vv. Afanasev et al., STRUCTURAL INHOMOGENEITY AND SILICON ENRICHMENT OF BURIED SIO2 LAYERSFORMED BY OXYGEN-ION IMPLANTATION IN SILICON, Journal of applied physics, 82(5), 1997, pp. 2184-2199
TRAP GENERATION IN BURIED OXIDES OF SILICON-ON-INSULATOR STRUCTURES BY VACUUM-ULTRAVIOLET RADIATION
Authors: AFANASEV VV STESMANS A REVESZ AG HUGHES HL
Citation: Vv. Afanasev et al., TRAP GENERATION IN BURIED OXIDES OF SILICON-ON-INSULATOR STRUCTURES BY VACUUM-ULTRAVIOLET RADIATION, Journal of the Electrochemical Society, 144(2), 1997, pp. 749-753
MECHANISM OF SI ISLAND RETENTION IN BURIED SIO2 LAYERS FORMED BY OXYGEN-ION IMPLANTATION
Authors: AFANASEV VV STESMANS A REVESZ AG HUGHES HL
Citation: Vv. Afanasev et al., MECHANISM OF SI ISLAND RETENTION IN BURIED SIO2 LAYERS FORMED BY OXYGEN-ION IMPLANTATION, Applied physics letters, 71(15), 1997, pp. 2106-2108
CONFINEMENT PHENOMENA IN BURIED OXIDES OF SIMOX STRUCTURES AS AFFECTED BY PROCESSING
Authors: AFANASEV VV REVESZ AG HUGHES HL
Citation: Vv. Afanasev et al., CONFINEMENT PHENOMENA IN BURIED OXIDES OF SIMOX STRUCTURES AS AFFECTED BY PROCESSING, Journal of the Electrochemical Society, 143(2), 1996, pp. 695-700
CONDUCTING AND CHARGE-TRAPPING DEFECTS IN BURIED OXIDE LAYERS OF SIMOX STRUCTURES
Authors: AFANASEV VV BROWN GA HUGHES HL LIU ST REVESZ AG
Citation: Vv. Afanasev et al., CONDUCTING AND CHARGE-TRAPPING DEFECTS IN BURIED OXIDE LAYERS OF SIMOX STRUCTURES, Journal of the Electrochemical Society, 143(1), 1996, pp. 347-352
CHARGE INSTABILITY OF BONDED SILICON DIOXIDE LAYER INDUCED BY WET-PROCESSING
Authors: AFANASEV VV REVESZ AG BROWN GA HUGHES HL
Citation: Vv. Afanasev et al., CHARGE INSTABILITY OF BONDED SILICON DIOXIDE LAYER INDUCED BY WET-PROCESSING, Journal of the Electrochemical Society, 142(6), 1995, pp. 1983-1986
DEEP AND SHALLOW ELECTRON TRAPPING IN THE BURIED OXIDE LAYER OF SIMOXSTRUCTURES
Authors: AFANASEV VV REVESZ AG BROWN GA HUGHES HL
Citation: Vv. Afanasev et al., DEEP AND SHALLOW ELECTRON TRAPPING IN THE BURIED OXIDE LAYER OF SIMOXSTRUCTURES, Journal of the Electrochemical Society, 141(10), 1994, pp. 2801-2804
DEFECT ELECTRICAL-CONDUCTION IN SIMOX BURIED OXIDES
Authors: BROWN GA REVESZ AG
Citation: Ga. Brown et Ag. Revesz, DEFECT ELECTRICAL-CONDUCTION IN SIMOX BURIED OXIDES, I.E.E.E. transactions on electron devices, 40(9), 1993, pp. 1700-1705
BULK ELECTRICAL-CONDUCTION IN THE BURIED OXIDE OF SIMOX STRUCTURES
Authors: REVESZ AG BROWN GA HUGHES HL
Citation: Ag. Revesz et al., BULK ELECTRICAL-CONDUCTION IN THE BURIED OXIDE OF SIMOX STRUCTURES, Journal of the Electrochemical Society, 140(11), 1993, pp. 3222-3229
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