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Results:
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Results: 8
Authors:
ANSLEY WE
CRESSLER JD
RICHEY DM
Citation: We. Ansley et al., BASE-PROFILE OPTIMIZATION FOR MINIMUM NOISE-FIGURE IN ADVANCED UHV CVD SIGE HBTS/, IEEE transactions on microwave theory and techniques, 46(5), 1998, pp. 653-660
Authors:
JOSEPH AJ
CRESSLER JD
RICHEY DM
JAEGER RC
HARAME DL
Citation: Aj. Joseph et al., NEUTRAL BASE RECOMBINATION AND ITS INFLUENCE ON THE TEMPERATURE-DEPENDENCE OF EARLY VOLTAGE AND CURRENT GAIN EARLY VOLTAGE PRODUCT IN UHV CVD SIGE HETEROJUNCTION BIPOLAR-TRANSISTORS/, I.E.E.E. transactions on electron devices, 44(3), 1997, pp. 404-413
Authors:
RICHEY DM
CRESSLER JD
JOSEPH AJ
Citation: Dm. Richey et al., SCALING ISSUES AND GE PROFILE OPTIMIZATION IN ADVANCED UHV CVD SIGE HBTS/, I.E.E.E. transactions on electron devices, 44(3), 1997, pp. 431-440
Authors:
JOSEPH AJ
CRESSLER JD
RICHEY DM
Citation: Aj. Joseph et al., OPTIMIZATION OF EARLY VOLTAGE FOR COOLED SIGE HBT PRECISION CURRENT SOURCES, Journal de physique. IV, 6(C3), 1996, pp. 125-129
Authors:
RICHEY DM
JOSEPH AJ
CRESSLER JD
JAEGER RC
Citation: Dm. Richey et al., EVIDENCE FOR NONEQUILIBRIUM BASE TRANSPORT IN SI AND SIGE BIPOLAR-TRANSISTORS AT CRYOGENIC TEMPERATURES, Solid-state electronics, 39(6), 1996, pp. 785-789
Authors:
JOSEPH AJ
CRESSLER JD
RICHEY DM
Citation: Aj. Joseph et al., OPERATION OF SIGE HETEROJUNCTION BIPOLAR-TRANSISTORS IN THE LIQUID-HELIUM TEMPERATURE REGIME, IEEE electron device letters, 16(6), 1995, pp. 268-270
Authors:
CRESSLER JD
RICHEY DM
JAEGER RC
CRABBE EF
COMFORT JH
STORK JMC
Citation: Jd. Cressler et al., HIGH-INJECTION BARRIER EFFECTS IN SIGE HBTS OPERATING AT CRYOGENIC TEMPERATURES, Journal de physique. IV, 4(C6), 1994, pp. 117-122
Authors:
RICHEY DM
CRESSLER JD
JAEGER RC
Citation: Dm. Richey et al., NUMERICAL-SIMULATION OF SIGE HBTS AT CRYOGENIC TEMPERATURES, Journal de physique. IV, 4(C6), 1994, pp. 127-132
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