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Results: 1-25 | 26-28
Results: 1-25/28
ROLE OF AL CONTENT ON SURFACE-STRUCTURE EVOLUTION OF LOW-TEMPERATURE ALXGA1-XAS AND ITS EFFECT AN CRITICAL THICKNESS
Authors: CARLIN JA RINGEL SA SACKS RN YAP KS
Citation: Ja. Carlin et al., ROLE OF AL CONTENT ON SURFACE-STRUCTURE EVOLUTION OF LOW-TEMPERATURE ALXGA1-XAS AND ITS EFFECT AN CRITICAL THICKNESS, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 16(3), 1998, pp. 1372-1376
TOWARD DEVICE-QUALITY GAAS GROWTH BY MOLECULAR-BEAM EPITAXY ON OFFCUTGE SI1-XGEX/SI SUBSTRATES/
Authors: SIEG RM RINGEL SA TING SM SAMAVEDAM SB CURRIE M LANGDO T FITZGERALD EA
Citation: Rm. Sieg et al., TOWARD DEVICE-QUALITY GAAS GROWTH BY MOLECULAR-BEAM EPITAXY ON OFFCUTGE SI1-XGEX/SI SUBSTRATES/, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 16(3), 1998, pp. 1471-1474
SCANNING FORCE MICROSCOPY STUDIES OF GAAS FILMS GROWN ON OFFCUT GE SUBSTRATES
Authors: XU Q HSU JWP TING SM FITZGERALD EA SIEG RM RINGEL SA
Citation: Q. Xu et al., SCANNING FORCE MICROSCOPY STUDIES OF GAAS FILMS GROWN ON OFFCUT GE SUBSTRATES, Journal of electronic materials, 27(9), 1998, pp. 1010-1016
ANTIPHASE DOMAIN-FREE GROWTH OF GAAS ON OFFCUT (001)GE WAFERS BY MOLECULAR-BEAM EPITAXY WITH SUPPRESSED GE OUTDIFFUSION
Authors: SIEG RM RINGEL SA TING SM FITZGERALD EA SACKS RN
Citation: Rm. Sieg et al., ANTIPHASE DOMAIN-FREE GROWTH OF GAAS ON OFFCUT (001)GE WAFERS BY MOLECULAR-BEAM EPITAXY WITH SUPPRESSED GE OUTDIFFUSION, Journal of electronic materials, 27(7), 1998, pp. 900-907
RANGE OF DEFECT MORPHOLOGIES ON GAAS GROWN ON OFFCUT (001)GE SUBSTRATES
Authors: TING SM FITZGERALD EA SIEG RM RINGEL SA
Citation: Sm. Ting et al., RANGE OF DEFECT MORPHOLOGIES ON GAAS GROWN ON OFFCUT (001)GE SUBSTRATES, Journal of electronic materials, 27(5), 1998, pp. 451-461
ELECTRICAL DEACTIVATION OF INTERSTITIAL ZN IN HETEROEPITAXIAL INP BY HYDROGEN AND ITS EFFECT ON ELECTRONIC-PROPERTIES
Authors: RINGEL SA CHATTERJEE B
Citation: Sa. Ringel et B. Chatterjee, ELECTRICAL DEACTIVATION OF INTERSTITIAL ZN IN HETEROEPITAXIAL INP BY HYDROGEN AND ITS EFFECT ON ELECTRONIC-PROPERTIES, Journal of applied physics, 83(11), 1998, pp. 5904-5912
PHOTONICS LABORATORY WITH EMPHASIS ON TECHNICAL DIVERSITY
Authors: ANDERSON BL PELZ LJ RINGEL SA CLYMER BD COLLINS SA
Citation: Bl. Anderson et al., PHOTONICS LABORATORY WITH EMPHASIS ON TECHNICAL DIVERSITY, IEEE transactions on education, 41(3), 1998, pp. 194-202
HIGH MINORITY-CARRIER LIFETIMES IN GAAS GROWN ON LOW-DEFECT-DENSITY GE GESI/SI SUBSTRATES/
Authors: SIEG RM CARLIN JA BOECKL JJ RINGEL SA CURRIE MT TING SM LANGDO TA TARASCHI G FITZGERALD EA KEYES BM
Citation: Rm. Sieg et al., HIGH MINORITY-CARRIER LIFETIMES IN GAAS GROWN ON LOW-DEFECT-DENSITY GE GESI/SI SUBSTRATES/, Applied physics letters, 73(21), 1998, pp. 3111-3113
HIGH BEGINNING-OF-LIFE EFFICIENCY P N INP SOLAR-CELLS/
Authors: HOFFMAN RW FATEMI NS WEIZER VG JENKINS PP STAN MA RINGEL SA SCHEIMAN DA WILT DM BRINKER DJ
Citation: Rw. Hoffman et al., HIGH BEGINNING-OF-LIFE EFFICIENCY P N INP SOLAR-CELLS/, Progress in photovoltaics, 5(6), 1997, pp. 415-422
HYDROGEN PASSIVATION OF INTERSTITIAL ZN DEFECTS IN HETEROEPITAXIAL INP CELL STRUCTURES AND INFLUENCE ON DEVICE CHARACTERISTICS
Authors: RINGEL SA CHATTERJEE B HOFFMAN RW
Citation: Sa. Ringel et al., HYDROGEN PASSIVATION OF INTERSTITIAL ZN DEFECTS IN HETEROEPITAXIAL INP CELL STRUCTURES AND INFLUENCE ON DEVICE CHARACTERISTICS, Progress in photovoltaics, 5(6), 1997, pp. 423-431
HYDROGEN-EXTENDED DEFECT INTERACTIONS IN HETEROEPITAXIAL INP MATERIALS AND DEVICES
Authors: RINGEL SA
Citation: Sa. Ringel, HYDROGEN-EXTENDED DEFECT INTERACTIONS IN HETEROEPITAXIAL INP MATERIALS AND DEVICES, Solid-state electronics, 41(3), 1997, pp. 359-380
APPLICATION OF PYROMETRIC INTERFEROMETRY TO THE IN-SITU MONITORING OFIN0.52AL0.48AS, IN0.53GA0.47AS, AND QUATERNARY ALLOY GROWTH ON INP SUBSTRATES (VOL 175, PG 256, 1997)
Authors: SIEG RM SACKS RN RINGEL SA
Citation: Rm. Sieg et al., APPLICATION OF PYROMETRIC INTERFEROMETRY TO THE IN-SITU MONITORING OFIN0.52AL0.48AS, IN0.53GA0.47AS, AND QUATERNARY ALLOY GROWTH ON INP SUBSTRATES (VOL 175, PG 256, 1997), Journal of crystal growth, 181(4), 1997, pp. 461-461
APPLICATION OF PYROMETRIC INTERFEROMETRY TO THE IN-SITU MONITORING OFIN0.52AL0.48AS, IN0.53GA0.47AS, AND QUATERNARY ALLOY GROWTH ON INP SUBSTRATES
Authors: SIEG RM SACKS RN RINGEL SA
Citation: Rm. Sieg et al., APPLICATION OF PYROMETRIC INTERFEROMETRY TO THE IN-SITU MONITORING OFIN0.52AL0.48AS, IN0.53GA0.47AS, AND QUATERNARY ALLOY GROWTH ON INP SUBSTRATES, Journal of crystal growth, 175, 1997, pp. 256-261
INVESTIGATION OF THE ACCURACY OF PYROMETRIC INTERFEROMETRY IN DETERMINING ALXGA1-XAS GROWTH-RATES AND COMPOSITIONS
Authors: SACKS RN SIEG RM RINGEL SA
Citation: Rn. Sacks et al., INVESTIGATION OF THE ACCURACY OF PYROMETRIC INTERFEROMETRY IN DETERMINING ALXGA1-XAS GROWTH-RATES AND COMPOSITIONS, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 14(3), 1996, pp. 2157-2162
HYDROGEN PASSIVATION OF N(-CELL STRUCTURES()P AND P(+)N HETEROEPITAXIAL INP SOLAR)
Authors: CHATTERJEE B RINGEL SA HOFFMANN R
Citation: B. Chatterjee et al., HYDROGEN PASSIVATION OF N(-CELL STRUCTURES()P AND P(+)N HETEROEPITAXIAL INP SOLAR), Progress in photovoltaics, 4(2), 1996, pp. 91-100
IMPROVED SUBSTRATE-TEMPERATURE STABILITY DURING MOLECULAR-BEAM EPITAXY GROWTH USING INDIUM FREE MOUNTING OF SMALL SUBSTRATES OF VARIOUS SHAPES
Authors: SIEG RM SACKS RN GRILLOT PN RINGEL SA
Citation: Rm. Sieg et al., IMPROVED SUBSTRATE-TEMPERATURE STABILITY DURING MOLECULAR-BEAM EPITAXY GROWTH USING INDIUM FREE MOUNTING OF SMALL SUBSTRATES OF VARIOUS SHAPES, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 14(6), 1996, pp. 3283-3287
EFFECT OF COMPOSITION ON DEEP LEVELS IN HETEROEPITAXIAL GEXS1-X LAYERS AND EVIDENCE FOR DOMINANT INTRINSIC RECOMBINATION-GENERATION IN RELAXED GE LAYERS ON SI
Authors: GRILLOT PN RINGEL SA FITZGERALD EA
Citation: Pn. Grillot et al., EFFECT OF COMPOSITION ON DEEP LEVELS IN HETEROEPITAXIAL GEXS1-X LAYERS AND EVIDENCE FOR DOMINANT INTRINSIC RECOMBINATION-GENERATION IN RELAXED GE LAYERS ON SI, Journal of electronic materials, 25(7), 1996, pp. 1028-1036
STRUCTURAL, ELECTRONIC, AND LUMINESCENCE INVESTIGATION OF STRAIN-RELAXATION INDUCED ELECTRICAL-CONDUCTIVITY TYPE CONVERSION IN GESI SI HETEROSTRUCTURES/
Authors: GRILLOT PN RINGEL SA MICHEL J FITZGERALD EA
Citation: Pn. Grillot et al., STRUCTURAL, ELECTRONIC, AND LUMINESCENCE INVESTIGATION OF STRAIN-RELAXATION INDUCED ELECTRICAL-CONDUCTIVITY TYPE CONVERSION IN GESI SI HETEROSTRUCTURES/, Journal of applied physics, 80(5), 1996, pp. 2823-2832
REABSORPTION, BAND-GAP NARROWING, AND THE RECONCILIATION OF PHOTOLUMINESCENCE SPECTRA WITH ELECTRICAL MEASUREMENTS FOR EPITAXIAL N-INP
Authors: SIEG RM RINGEL SA
Citation: Rm. Sieg et Sa. Ringel, REABSORPTION, BAND-GAP NARROWING, AND THE RECONCILIATION OF PHOTOLUMINESCENCE SPECTRA WITH ELECTRICAL MEASUREMENTS FOR EPITAXIAL N-INP, Journal of applied physics, 80(1), 1996, pp. 448-458
EFFECT OF EXTENDED DEFECTS ON THE FORMATION AND DISSOCIATION KINETICSOF ZN-H COMPLEXES IN HETEROEPITAXIAL P-TYPE INP LAYERS
Authors: CHATTERJEE B RINGEL SA
Citation: B. Chatterjee et Sa. Ringel, EFFECT OF EXTENDED DEFECTS ON THE FORMATION AND DISSOCIATION KINETICSOF ZN-H COMPLEXES IN HETEROEPITAXIAL P-TYPE INP LAYERS, Applied physics letters, 69(6), 1996, pp. 839-841
IDENTIFICATION OF COMPOSITIONALLY INVARIANT DEEP LEVELS INTRODUCED BYPLASTIC STRAIN IN EPITAXIAL GE0.30SI0.70 AND DEFORMED BULK SI
Authors: GRILLOT PN RINGEL SA
Citation: Pn. Grillot et Sa. Ringel, IDENTIFICATION OF COMPOSITIONALLY INVARIANT DEEP LEVELS INTRODUCED BYPLASTIC STRAIN IN EPITAXIAL GE0.30SI0.70 AND DEFORMED BULK SI, Applied physics letters, 69(14), 1996, pp. 2110-2112
SUBBAND QUANTUM SCATTERING TIMES FOR ALGAAS GAAS OBTAINED USING DIGITAL FILTERING/
Authors: MENA RA SCHACHAM SE HAUGLAND EJ ALTEROVITZ SA BIBYK SB RINGEL SA
Citation: Ra. Mena et al., SUBBAND QUANTUM SCATTERING TIMES FOR ALGAAS GAAS OBTAINED USING DIGITAL FILTERING/, Journal of applied physics, 78(6), 1995, pp. 3940-3944
CHARACTERIZATION OF THE TRANSPORT-PROPERTIES OF CHANNEL DELTA-DOPED STRUCTURES BY LIGHT-MODULATED SHUBNIKOV-DE HAAS MEASUREMENTS
Authors: MENA RA SCHACHAM SE HAUGLAND EJ ALTEROVITZ SA YOUNG PG BIBYK SB RINGEL SA
Citation: Ra. Mena et al., CHARACTERIZATION OF THE TRANSPORT-PROPERTIES OF CHANNEL DELTA-DOPED STRUCTURES BY LIGHT-MODULATED SHUBNIKOV-DE HAAS MEASUREMENTS, Journal of applied physics, 78(11), 1995, pp. 6626-6632
HYDROGEN PASSIVATION AND ITS EFFECTS ON CARRIER TRAPPING BY DISLOCATIONS IN INP GAAS HETEROSTRUCTURES/
Authors: CHATTERJEE B RINGEL SA
Citation: B. Chatterjee et Sa. Ringel, HYDROGEN PASSIVATION AND ITS EFFECTS ON CARRIER TRAPPING BY DISLOCATIONS IN INP GAAS HETEROSTRUCTURES/, Journal of applied physics, 77(8), 1995, pp. 3885-3898
ELECTRON TRAPPING KINETICS AT DISLOCATIONS IN RELAXED GE0.3SI0.7 SI HETEROSTRUCTURES/
Authors: GRILLOT PN RINGEL SA FITZGERALD EA WATSON GP XIE YH
Citation: Pn. Grillot et al., ELECTRON TRAPPING KINETICS AT DISLOCATIONS IN RELAXED GE0.3SI0.7 SI HETEROSTRUCTURES/, Journal of applied physics, 77(7), 1995, pp. 3248-3256
Risultati: 1-25 | 26-28