Citation: Jo. Weidner et al., CHARACTERIZATION OF SIGE QUANTUM-WELL P-CHANNEL MOSFETS, Journal of materials science. Materials in electronics, 6(5), 1995, pp. 325-329
Citation: H. Gossner et al., VERTICAL SI-METAL-OXIDE-SEMICONDUCTOR FIELD-EFFECT TRANSISTORS WITH CHANNEL LENGTHS OF 50 NM BY MOLECULAR-BEAM EPITAXY, JPN J A P 1, 33(4B), 1994, pp. 2423-2428