VERTICAL MOS-TRANSISTORS WITH 70 NM CHANNEL-LENGTH

Vertical nMOS transistors with channel lengths down to 70 nm and thin gate oxides have been fabricated using LPCVD epitaxy for the definitio n of the channel region instead of fine line lithography. The devices show drain current and transconductance values comparable to very adva nced planar transistors. For the shortest channel length a very strong increase of saturation current is observed and is attributed to V-t s hift and floating substrate effects. Moreover, transconductance may in dicate ballistic overshoot. Besides high saturation currents due to ve ry short channel lengths higher integration density seems to be very a ttractive for special applications.