Authors: RISCH L

Citation: L. Risch, NANOELECTRONICS - THE KEY TECHNOLOGY OF THE 21ST-CENTURY, Siemens Review, 1996, pp. 32-35

Authors: KREUPL F VANCEA J RISCH L HOFMANN F HOFFMANN H

Citation: F. Kreupl et al., ULTRASMALL PT CLUSTERS FOR SINGLE-ELECTRON TUNNELING STUDIES, Microelectronic engineering, 30(1-4), 1996, pp. 451-454

Authors: RISCH L KRAUTSCHNEIDER WH HOFMANN F SCHAFER H AEUGLE T ROSNER W

Citation: L. Risch et al., VERTICAL MOS-TRANSISTORS WITH 70 NM CHANNEL-LENGTH, I.E.E.E. transactions on electron devices, 43(9), 1996, pp. 1495-1498

Authors: WEIDNER JO HOFMANN KR HOFMANN F RISCH L

Citation: Jo. Weidner et al., CHARACTERIZATION OF SIGE QUANTUM-WELL P-CHANNEL MOSFETS, Journal of materials science. Materials in electronics, 6(5), 1995, pp. 325-329

Authors: ROSNER W HOFMANN F VOGELSANG T RISCH L

Citation: W. Rosner et al., SIMULATION OF SINGLE-ELECTRON CIRCUITS, Microelectronic engineering, 27(1-4), 1995, pp. 55-58

Authors: GOSSNER H EISELE I RISCH L

Citation: H. Gossner et al., VERTICAL SI-METAL-OXIDE-SEMICONDUCTOR FIELD-EFFECT TRANSISTORS WITH CHANNEL LENGTHS OF 50 NM BY MOLECULAR-BEAM EPITAXY, JPN J A P 1, 33(4B), 1994, pp. 2423-2428