Authors: RITALA M ASIKAINEN T LESKELA M JOKINEN J LAPPALAINEN R UTRIAINEN M NIINISTO L RISTOLAINEN E

Citation: M. Ritala et al., EFFECTS OF INTERMEDIATE ZINC PULSES ON PROPERTIES OF TIN AND NBN FILMS DEPOSITED BY ATOMIC LAYER EPITAXY, Applied surface science, 120(3-4), 1997, pp. 199-212

Authors: HARJU E KORHONEN AS JIANG LZ RISTOLAINEN E

Citation: E. Harju et al., EFFECT OF WORK MATERIAL COMPOSITION ON THE WEAR LIFE OF TIN-COATED TOOLS, Surface & coatings technology, 85(3), 1996, pp. 189-203

Authors: FISCHER V KIM TJ HOLLOWAY PH RISTOLAINEN E SCHOENFELD D

Citation: V. Fischer et al., FORMATION OF OHMIC CONTACTS TO N-GAAS USING (NH4)2S SURFACE PASSIVATION, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 12(3), 1994, pp. 1419-1421

Authors: FISCHER V RISTOLAINEN E HOLLOWAY PH LAMPERT WV HAAS TW

Citation: V. Fischer et al., SULFUR PASSIVATION OF ALXGA1-XAS FOR OHMIC CONTACT FORMATION, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 12(4), 1994, pp. 1103-1107

Authors: XIA Z SAARILAHTI J RISTOLAINEN E ERANEN S RONKAINEN H KUIVALAINEN P PAINE D TUOMI T

Citation: Z. Xia et al., AMORPHIZATION OF SILICON BY HIGH-DOSE GERMANIUM ION-IMPLANTATION WITHNO EXTERNAL COOLING MECHANISM, Applied surface science, 78(3), 1994, pp. 321-330

Authors: XIA Z SAARILAHTI J RONKAINEN H ERANEN S SUNI I MOLARIUS J KUIVALAINEN P RISTOLAINEN E TUOMI T

Citation: Z. Xia et al., RAPID THERMAL ANNEALING OF SI1-XGEX LAYERS FORMED BY GERMANIUM ION-IMPLANTATION, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 88(3), 1994, pp. 247-254