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Results:
1-20
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Results: 20
Authors:
GARRIDO B
PEREZRODRIGUEZ A
MORANTE JR
ACHIQ A
GOURBILLEAU F
MADELON R
RIZK R
Citation: B. Garrido et al., STRUCTURAL, OPTICAL, AND ELECTRICAL-PROPERTIES OF NANOCRYSTALLINE SILICON FILMS DEPOSITED BY HYDROGEN PLASMA SPUTTERING, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 16(4), 1998, pp. 1851-1859
Authors:
ACHIQ A
RIZK R
GOURBILLEAU F
MADELON R
GARRIDO B
PEREZRODRIGUEZ A
MORANTE JR
Citation: A. Achiq et al., EFFECTS OF PRIOR HYDROGENATION ON THE STRUCTURE AND PROPERTIES OF THERMALLY NANOCRYSTALLIZED SILICON LAYERS, Journal of applied physics, 83(11), 1998, pp. 5797-5803
Authors:
TROWERS EA
GANGA U
RIZK R
OJO E
HODGES D
Citation: Ea. Trowers et al., ENDOSCOPIC HEMORRHOIDAL LIGATION - PRELIMINARY CLINICAL-EXPERIENCE, Gastrointestinal endoscopy, 48(1), 1998, pp. 49-52
Authors:
TROWERS EA
GANGA U
RIZK R
OJO E
HODGES D
Citation: Ea. Trowers et al., EFFICACY AND SAFETY OF ENDOSCOPIC RETROGRADE LIGATION OF BLEEDING INTERNAL HEMORRHOIDS, Gastrointestinal endoscopy, 47(4), 1998, pp. 66-66
Authors:
ACHIQ A
RIZK R
MADELON R
GOURBILLEAU F
VOIVENEL P
Citation: A. Achiq et al., GROWTH-CONTROL AND PROPERTIES OF MICROCRYSTALLIZED SILICON FILMS DEPOSITED BY HYDROGEN PLASMA SPUTTERING, Thin solid films, 296(1-2), 1997, pp. 15-18
Authors:
JAWISH R
KASSAB F
KAIRALLAH S
RIZK R
Citation: R. Jawish et al., INTRAMEDULLARY DIAPHYSEAL OSTEOID OSTEOMA IN CHILDREN, Revue de chirurgie orthopedique et reparatrice de l'appareil moteur, 83(1), 1997, pp. 74-77
Authors:
PORTIER X
IHLAL A
RIZK R
Citation: X. Portier et al., IRON SILICIDE FORMATION BY PRECIPITATION IN A SILICON BICRYSTAL, Physica status solidi. a, Applied research, 161(1), 1997, pp. 75-84
Authors:
COLTER SJ
RIZK R
BRONNER MP
PERKINS JD
CARITHERS RL
Citation: Sj. Colter et al., CHOLESTASIS PREDICTS SEVERE HEPATITIS-C RECURRENCE AFTER LIVER-TRANSPLANTATION (OLT), Hepatology, 24(4), 1996, pp. 688-688
Authors:
PORTIER X
RIZK R
Citation: X. Portier et R. Rizk, NICKEL PRECIPITATION AT THE GRAIN-BOUNDARY OF A SILICON BICRYSTAL, Physica status solidi. a, Applied research, 155(1), 1996, pp. 125-140
Authors:
IHLAL A
RIZK R
Citation: A. Ihlal et R. Rizk, EFFECTS OF IRON CONTAMINATION ON THE ELECTRICAL-ACTIVITY OF A SILICONBICRYSTAL, Journal of physics. D, Applied physics, 29(12), 1996, pp. 3096-3100
Authors:
IHLAL A
RIZK R
DUPARC OBMH
Citation: A. Ihlal et al., CORRELATION BETWEEN THE GETTERING EFFICIENCIES AND THE ENERGIES INTERFACES IN SILICON BICRYSTALS, Journal of applied physics, 80(5), 1996, pp. 2665-2670
Authors:
IHLAL A
RIZK R
VOIVENEL P
NOUET G
Citation: A. Ihlal et al., A COMPARATIVE-STUDY OF THE EBIC CONTRAST AND GETTERING EFFICIENCY OF THE TILT BOUNDARIES SIGMA=25, SIGMA=13 AND SIGMA=9 IN SILICON BICRYSTALS, Journal de physique. III, 5(9), 1995, pp. 1371-1382
Authors:
RIZK R
MADELON R
CRUEGE F
Citation: R. Rizk et al., EFFECTS OF A GRAIN-BOUNDARY ON THE PHOTOLUMINESENCE SPECTRUM OF SILICON - EXPANSION OF ELECTRON-HOLE DROPLET CLOUD, Journal of physics. Condensed matter, 7(30), 1995, pp. 6161-6177
Authors:
DEMIERRY P
MADELON R
CRUEGE F
RIZK R
Citation: P. Demierry et al., LIGHT-INDUCED DEFECTS IN PLASMA-HYDROGENATED INP-ZN, Applied physics A: Materials science & processing, 61(2), 1995, pp. 135-140
Authors:
PORTIER X
RIZK R
NOUET G
ALLAIS G
Citation: X. Portier et al., HIGH-RESOLUTION ELECTRON-MICROSCOPY OBSERVATIONS OF SILICON NICKEL SILICIDE INTERFACES IN A SIGMA=25 SILICON BICRYSTAL, Philosophical magazine. A. Physics of condensed matter. Defects and mechanical properties, 71(5), 1995, pp. 1109-1123
Authors:
RIZK R
IHLAL A
PORTIER X
Citation: R. Rizk et al., EVOLUTION OF ELECTRICAL-ACTIVITY AND STRUCTURE OF NICKEL PRECIPITATESWITH THE TREATMENT TEMPERATURE OF A SIGMA=25 SILICON BICRYSTAL, Journal of applied physics, 77(5), 1995, pp. 1875-1880
Authors:
RIZK R
CRUEGE F
MADELON R
NOUET G
Citation: R. Rizk et al., SPATIALLY-RESOLVED PHOTOLUMINESCENCE AND ELECTRON-BEAM-INDUCED CURRENT STUDIES OF A COINCIDENCE SIGMA=25 SILICON BICRYSTAL, Materials science & engineering. B, Solid-state materials for advanced technology, 24(1-3), 1994, pp. 184-187
Authors:
RIZK R
PORTIER X
ALLAIS G
NOUET G
Citation: R. Rizk et al., ELECTRICAL AND STRUCTURAL STUDIES OF COPPER AND NICKEL PRECIPITATES IN A SIGMA=25 SILICON BICRYSTAL, Journal of applied physics, 76(2), 1994, pp. 952-958
Authors:
DEMIERRY P
ETCHEBERRY A
RIZK R
ETCHEGOIN P
AUCOUTURIER M
Citation: P. Demierry et al., DEFECTS INDUCED IN P-TYPE SILICON BY PHOTOCATHODIC CHARGING OF HYDROGEN, Journal of the Electrochemical Society, 141(6), 1994, pp. 1539-1546
Authors:
RIZK R
THEYS B
PESANT JC
CHEVALLIER J
AUCOUTURIER M
PAJOT B
Citation: R. Rizk et al., DEUTERIUM EFFUSION FROM CRYSTALLINE N-TYPE GAAS(SI), Physical review. B, Condensed matter, 47(23), 1993, pp. 15523-15532
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