Authors:
STRZELECKA EM
ROBINSON GD
COLDREN LA
HU EL
Citation: Em. Strzelecka et al., FABRICATION OF REFRACTIVE MICROLENSES IN SEMICONDUCTORS BY MASK SHAPETRANSFER IN REACTIVE ION ETCHING, Microelectronic engineering, 35(1-4), 1997, pp. 385-388
Authors:
STRZELECKA EM
ROBINSON GD
PETERS MG
PETERS FH
COLDREN LA
Citation: Em. Strzelecka et al., MONOLITHIC INTEGRATION OF VERTICAL-CAVITY LASER-DIODES WITH REFRACTIVE GAAS MICROLENSES, Electronics Letters, 31(9), 1995, pp. 724-725
Citation: Gd. Robinson, EFFECTS OF ACCLIMATION SALINITY ON SODIUM FLUXES IN THE BLUE-CRAB (CALLINECTES-SAPIDUS), Comparative biochemistry and physiology. Part A, Physiology, 108(1), 1994, pp. 69-73
Citation: Pw. Yu et al., 0.8EV PHOTOLUMINESCENCE OF GAAS GROWN BY MOLECULAR-BEAM EPITAXY AT LOW-TEMPERATURES, Physical review. B, Condensed matter, 49(7), 1994, pp. 4689-4694
Citation: Rb. Kroll et al., CHARACTERIZATION OF TRIHALOMETHANE (THM)-INDUCED RENAL DYSFUNCTION INTHE RAT .1. EFFECTS OF THM ON GLOMERULAR-FILTRATION AND RENAL CONCENTRATING ABILITY, Archives of environmental contamination and toxicology, 27(1), 1994, pp. 1-4
Citation: Rb. Kroll et al., CHARACTERIZATION OF TRIHALOMETHANE (THM)-INDUCED RENAL DYSFUNCTION INTHE RAT .2. RELATIVE POTENCY OF THMS IN PROMOTING RENAL DYSFUNCTION, Archives of environmental contamination and toxicology, 27(1), 1994, pp. 5-7
Citation: Gd. Robinson, MAJOR-ELEMENT CHEMISTRY AND MICROMORPHOLOGY OF MN-OXIDE COATINGS ON STREAM ALLUVIUM, Applied geochemistry, 8(6), 1993, pp. 633-642
Citation: Dc. Look et al., ELECTRICAL-PROPERTIES OF MOLECULAR-BEAM EPITAXIAL GAAS GROWN AT 300-450-DEGREES-C, Journal of electronic materials, 22(12), 1993, pp. 1425-1428
Citation: Gd. Robinson, EFFECTS OF REDUCED AMBIENT PH ON SODIUM-BALANCE IN THE RED-SPOTTED NEWT, NOTOPHTHALMUS-VIRIDESCENS, Physiological zoology, 66(4), 1993, pp. 602-618
Authors:
LOOK DC
WALTERS DC
ROBINSON GD
SIZELOVE JR
MIER MG
STUTZ CE
Citation: Dc. Look et al., ANNEALING DYNAMICS OF MOLECULAR-BEAM EPITAXIAL GAAS GROWN AT 200-DEGREES-C, Journal of applied physics, 74(1), 1993, pp. 306-310
Authors:
MERKEL KG
BRIGHT VM
ROBINSON GD
HUANG CI
TROMBLEY GJ
Citation: Kg. Merkel et al., COMPARISON OF AL AND TIPTAU METALLIZATIONS ON A GAAS-MESFET WITH GEMOW OHMIC CONTACTS, Electronics Letters, 29(11), 1993, pp. 1012-1013
Citation: Dc. Look et al., DONOR AND ACCEPTOR CONCENTRATIONS IN MOLECULAR-BEAM EPITAXIAL GAAS GROWN AT 300-DEGREES-C AND 400-DEGREES-C, Applied physics letters, 62(23), 1993, pp. 3004-3006