Authors: ROEHLE H SCHROETERJANSSEN H KAISER R

Citation: H. Roehle et al., LARGE-AREA AND SELECTIVE-AREA LP-MOVPE GROWTH OF INGAASP-BASED BULK AND QW LAYERS UNDER NITROGEN ATMOSPHERE, Journal of crystal growth, 170(1-4), 1997, pp. 109-112

Authors: FRANKE D ROEHLE H

Citation: D. Franke et H. Roehle, HIGHLY REPRODUCIBLE AND DEFECT-FREE MOVPE OVERGROWTH OF INGAASP-BASEDDFB GRATINGS, Journal of crystal growth, 170(1-4), 1997, pp. 113-116

Authors: ROEHLE H SCHROETERJANSSEN H HARDE P FRANKE D

Citation: H. Roehle et al., ON THE ROLE OF INTERFACE PROPERTIES IN THE DEGRADATION OF METALORGANIC VAPOR-PHASE EPITAXIALLY GROWN FE PROFILES IN INP, Journal of electronic materials, 24(11), 1995, pp. 1535-1537

Authors: KROST A BOHRER J ROEHLE H BAUER G

Citation: A. Krost et al., STRAIN DISTRIBUTION IN INP INGAAS SUPERLATTICE STRUCTURE DETERMINED BY HIGH-RESOLUTION X-RAY-DIFFRACTION/, Applied physics letters, 64(4), 1994, pp. 469-471

Authors: ROSSOW U KROST A WERNINGHAUS T SCHATKE K RICHTER W HASE A KUNZEL H ROEHLE H

Citation: U. Rossow et al., ELLIPSOMETRIC CHARACTERIZATION OF INP-BASED QUANTUM-WELL STRUCTURES, Thin solid films, 233(1-2), 1993, pp. 180-184