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Results: 1-25 | 26-28

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DIRECT EVIDENCE THAT DISLOCATIONS ARE NONRADIATIVE RECOMBINATION CENTERS IN GAN

Authors: SUGAHARA T SATO H HAO MS NAOI Y KURAI S TOTTORI S YAMASHITA K NISHINO K ROMANO LT SAKAI S

Citation: T. Sugahara et al., DIRECT EVIDENCE THAT DISLOCATIONS ARE NONRADIATIVE RECOMBINATION CENTERS IN GAN, JPN J A P 2, 37(4A), 1998, pp. 398-400

CHARACTERISTICS OF INGAN-ALGAN MULTIPLE-QUANTUM-WELL LASER-DIODES

Authors: BOUR DP KNEISSL M ROMANO LT MCCLUSKEY MD VANDEWALLE CG KRUSOR BS DONALDSON RM WALKER J DUNNROWICZ CJ JOHNSON NM

Citation: Dp. Bour et al., CHARACTERISTICS OF INGAN-ALGAN MULTIPLE-QUANTUM-WELL LASER-DIODES, IEEE journal of selected topics in quantum electronics, 4(3), 1998, pp. 498-504

INFLUENCE OF GROWTH-CONDITIONS, INVERSION DOMAINS, AND ATOMIC-HYDROGEN ON GROWTH OF (0001)GAN BY MOLECULAR-BEAM EPITAXY

Authors: MYERS TH HIRSCH LS ROMANO LT RICHARDSBABB MR

Citation: Th. Myers et al., INFLUENCE OF GROWTH-CONDITIONS, INVERSION DOMAINS, AND ATOMIC-HYDROGEN ON GROWTH OF (0001)GAN BY MOLECULAR-BEAM EPITAXY, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 16(4), 1998, pp. 2261-2266

PHASE-SEPARATION IN ANNEALED INGAN GAN MULTIPLE-QUANTUM WELLS/

Authors: ROMANO LT MCCLUSKEY MD KRUSOR BS BOUR DP CHUA C BRENNAN S YU KM

Citation: Lt. Romano et al., PHASE-SEPARATION IN ANNEALED INGAN GAN MULTIPLE-QUANTUM WELLS/, Journal of crystal growth, 190, 1998, pp. 33-36

GALLIUM NITRIDE WHISKERS FORMED BY SELECTIVE PHOTOENHANCED WET ETCHING OF DISLOCATIONS

Authors: YOUTSEY C ROMANO LT ADESIDA I

Citation: C. Youtsey et al., GALLIUM NITRIDE WHISKERS FORMED BY SELECTIVE PHOTOENHANCED WET ETCHING OF DISLOCATIONS, Applied physics letters, 73(6), 1998, pp. 797-799

STRUCTURAL AND OPTICAL-PROPERTIES OF EPITAXIALLY OVERGROWN 3RD-ORDER GRATINGS FOR INGAN GAN-BASED DISTRIBUTED-FEEDBACK LASERS/

Authors: ROMANO LT HOFSTETTER D MCCLUSKEY MD BOUR DP KNEISSL M

Citation: Lt. Romano et al., STRUCTURAL AND OPTICAL-PROPERTIES OF EPITAXIALLY OVERGROWN 3RD-ORDER GRATINGS FOR INGAN GAN-BASED DISTRIBUTED-FEEDBACK LASERS/, Applied physics letters, 73(19), 1998, pp. 2706-2708

ROOM-TEMPERATURE PULSED OPERATION OF AN ELECTRICALLY INJECTED INGAN GAN MULTIQUANTUM-WELL DISTRIBUTED-FEEDBACK LASER/

Authors: HOFSTETTER D THORNTON RL ROMANO LT BOUR DP KNEISSL M DONALDSON RM

Citation: D. Hofstetter et al., ROOM-TEMPERATURE PULSED OPERATION OF AN ELECTRICALLY INJECTED INGAN GAN MULTIQUANTUM-WELL DISTRIBUTED-FEEDBACK LASER/, Applied physics letters, 73(15), 1998, pp. 2158-2160

STRUCTURAL AND OPTICAL-PROPERTIES OF PSEUDOMORPHIC INXGA1-XN ALLOYS

Authors: ROMANO LT KRUSOR BS MCCLUSKEY MD BOUR DP NAUKA K

Citation: Lt. Romano et al., STRUCTURAL AND OPTICAL-PROPERTIES OF PSEUDOMORPHIC INXGA1-XN ALLOYS, Applied physics letters, 73(13), 1998, pp. 1757-1759

SMOOTH N-TYPE GAN SURFACES BY PHOTOENHANCED WET ETCHING

Authors: YOUTSEY C ADESIDA I ROMANO LT BULMAN G

Citation: C. Youtsey et al., SMOOTH N-TYPE GAN SURFACES BY PHOTOENHANCED WET ETCHING, Applied physics letters, 72(5), 1998, pp. 560-562

LARGE BAND-GAP BOWING OF INXGA1-XN ALLOYS

Authors: MCCLUSKEY MD VANDEWALLE CG MASTER CP ROMANO LT JOHNSON NM

Citation: Md. Mccluskey et al., LARGE BAND-GAP BOWING OF INXGA1-XN ALLOYS, Applied physics letters, 72(21), 1998, pp. 2725-2726

PHASE-SEPARATION IN INGAN GAN MULTIPLE-QUANTUM WELLS/

Authors: MCCLUSKEY MD ROMANO LT KRUSOR BS BOUR DP JOHNSON NM BRENNAN S

Citation: Md. Mccluskey et al., PHASE-SEPARATION IN INGAN GAN MULTIPLE-QUANTUM WELLS/, Applied physics letters, 72(14), 1998, pp. 1730-1732

CHARACTERIZATION OF ALGAINN DIODE-LASERS WITH MIRRORS FROM CHEMICALLYASSISTED ION-BEAM ETCHING

Authors: KNEISSL M BOUR DP JOHNSON NM ROMANO LT KRUSOR BS DONALDSON R WALKER J DUNNROWICZ C

Citation: M. Kneissl et al., CHARACTERIZATION OF ALGAINN DIODE-LASERS WITH MIRRORS FROM CHEMICALLYASSISTED ION-BEAM ETCHING, Applied physics letters, 72(13), 1998, pp. 1539-1541

HALL-EFFECT ANALYSIS OF GAN FILMS GROWN BY HYDRIDE VAPOR-PHASE EPITAXY

Authors: GOTZ W ROMANO LT WALKER J JOHNSON NM MOLNAR RJ

Citation: W. Gotz et al., HALL-EFFECT ANALYSIS OF GAN FILMS GROWN BY HYDRIDE VAPOR-PHASE EPITAXY, Applied physics letters, 72(10), 1998, pp. 1214-1216

STRUCTURE OF GAN FILMS GROWN BY MOLECULAR-BEAM EPITAXY ON (0001)SAPPHIRE

Authors: ROMANO LT KRUSOR BS SINGH R MOUSTAKAS TD

Citation: Lt. Romano et al., STRUCTURE OF GAN FILMS GROWN BY MOLECULAR-BEAM EPITAXY ON (0001)SAPPHIRE, Journal of electronic materials, 26(3), 1997, pp. 285-289

GROWTH OF GALLIUM NITRIDE BY HYDRIDE VAPOR-PHASE EPITAXY

Authors: MOLNAR RJ GOTZ W ROMANO LT JOHNSON NM

Citation: Rj. Molnar et al., GROWTH OF GALLIUM NITRIDE BY HYDRIDE VAPOR-PHASE EPITAXY, Journal of crystal growth, 178(1-2), 1997, pp. 147-156

THE INFLUENCE OF INVERSION DOMAINS ON SURFACE-MORPHOLOGY IN GAN GROWNBY MOLECULAR-BEAM EPITAXY

Authors: ROMANO LT MYERS TH

Citation: Lt. Romano et Th. Myers, THE INFLUENCE OF INVERSION DOMAINS ON SURFACE-MORPHOLOGY IN GAN GROWNBY MOLECULAR-BEAM EPITAXY, Applied physics letters, 71(24), 1997, pp. 3486-3488

CHARACTERIZATION OF INTRACAVITY REFLECTIONS BY FOURIER TRANSFORMING SPECTRAL DATA OF OPTICALLY PUMPED INGAN LASERS

Authors: HOFSTETTER D ROMANO LT THORNTON RL BOUR DP JOHNSON NM

Citation: D. Hofstetter et al., CHARACTERIZATION OF INTRACAVITY REFLECTIONS BY FOURIER TRANSFORMING SPECTRAL DATA OF OPTICALLY PUMPED INGAN LASERS, Applied physics letters, 71(22), 1997, pp. 3200-3202

STRUCTURE OF GAN FILMS GROWN BY HYDRIDE VAPOR-PHASE EPITAXY

Authors: ROMANO LT KRUSOR BS MOLNAR RJ

Citation: Lt. Romano et al., STRUCTURE OF GAN FILMS GROWN BY HYDRIDE VAPOR-PHASE EPITAXY, Applied physics letters, 71(16), 1997, pp. 2283-2285

PHASE-SEPARATION IN INGAN THICK-FILMS AND FORMATION OF INGAN GAN DOUBLE HETEROSTRUCTURES IN THE ENTIRE ALLOY COMPOSITION/

Authors: SINGH R DOPPALAPUDI D MOUSTAKAS TD ROMANO LT

Citation: R. Singh et al., PHASE-SEPARATION IN INGAN THICK-FILMS AND FORMATION OF INGAN GAN DOUBLE HETEROSTRUCTURES IN THE ENTIRE ALLOY COMPOSITION/, Applied physics letters, 70(9), 1997, pp. 1089-1091

INVERSION DOMAIN AND STACKING MISMATCH BOUNDARIES IN GAN

Authors: NORTHRUP JE NEUGEBAUER J ROMANO LT

Citation: Je. Northrup et al., INVERSION DOMAIN AND STACKING MISMATCH BOUNDARIES IN GAN, Physical review letters, 77(1), 1996, pp. 103-106

MICROSTRUCTURAL CHARACTERIZATION OF YBA2CU3O7 WHISKERS GROWN FROM THEGAS-PHASE

Authors: LEPISTO TK ROMANO LT JARVINEN ROJ MANTYLA TA

Citation: Tk. Lepisto et al., MICROSTRUCTURAL CHARACTERIZATION OF YBA2CU3O7 WHISKERS GROWN FROM THEGAS-PHASE, Journal of Materials Science, 31(6), 1996, pp. 1399-1403

ELECTRONIC AND STRUCTURAL-PROPERTIES OF GAN GROWN BY HYDRIDE VAPOR-PHASE EPITAXY

Authors: GOTZ W ROMANO LT KRUSOR BS JOHNSON NW MOLNAR RJ

Citation: W. Gotz et al., ELECTRONIC AND STRUCTURAL-PROPERTIES OF GAN GROWN BY HYDRIDE VAPOR-PHASE EPITAXY, Applied physics letters, 69(2), 1996, pp. 242-244

INVERSION DOMAINS IN GAN GROWN ON SAPPHIRE

Authors: ROMANO LT NORTHRUP JE OKEEFE MA

Citation: Lt. Romano et al., INVERSION DOMAINS IN GAN GROWN ON SAPPHIRE, Applied physics letters, 69(16), 1996, pp. 2394-2396

INTERFACE STRUCTURE OF ZNS SI(001) AND COMPARISON WITH ZNSE/SI(001) AND GAAS/SI(001)/

Authors: ROMANO LT BRINGANS RD ZHOU X KIRK WP

Citation: Lt. Romano et al., INTERFACE STRUCTURE OF ZNS SI(001) AND COMPARISON WITH ZNSE/SI(001) AND GAAS/SI(001)/, Physical review. B, Condensed matter, 52(15), 1995, pp. 11201-11205

THREADING DISLOCATIONS IN GAAS GROWN WITH FREE SIDEWALLS ON SI MESAS

Authors: KNALL J ROMANO LT KRUSOR BS BIEGELSEN DK BRINGANS RD

Citation: J. Knall et al., THREADING DISLOCATIONS IN GAAS GROWN WITH FREE SIDEWALLS ON SI MESAS, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 12(6), 1994, pp. 3069-3074

Risultati: 1-25 | 26-28