Authors: BILLAT S GASPARD F HERINO R LIGEON M MULLER F ROMESTAIN F VIAL JC

Citation: S. Billat et al., ELECTROLUMINESCENCE OF HEAVILY-DOPED P-TYPE POROUS SILICON UNDER ELECTROCHEMICAL OXIDATION IN THE POTENTIOSTATIC REGIME, Thin solid films, 263(2), 1995, pp. 238-242