Authors:
BSIESY A
MULLER F
MIHALCESCU I
LIGEON M
GASPARD F
HERINO R
ROMESTAIN R
VIAL JC
Citation: A. Bsiesy et al., ELECTRICALLY-INDUCED SELECTIVE QUENCHING OF POROUS SILICON PHOTOLUMINESCENCE, Journal of luminescence, 57(1-6), 1993, pp. 29-32
Authors:
BUSTARRET E
MIHALCESCU I
LIGEON M
ROMESTAIN R
VIAL JC
MADEORE F
Citation: E. Bustarret et al., COMPARISON OF ROOM-TEMPERATURE PHOTOLUMINESCENCE DECAYS IN ANODICALLYOXIDIZED CRYSTALLINE AND X-RAY-AMORPHOUS POROUS SILICON, Journal of luminescence, 57(1-6), 1993, pp. 105-109
Authors:
MIHALCESCU I
LIGEON M
MULLER F
ROMESTAIN R
VIAL JC
Citation: I. Mihalcescu et al., SURFACE PASSIVATION - A CRITICAL PARAMETER FOR THE VISIBLE LUMINESCENCE OF ELECTROOXIDIZED POROUS SILICON, Journal of luminescence, 57(1-6), 1993, pp. 111-115
Citation: G. Fishman et al., EXPERIMENTAL AND THEORETICAL ASPECTS OF RADIATIVE PROCESSES IN POROUSSILICON, Journal of luminescence, 57(1-6), 1993, pp. 235-238
Authors:
MULLER F
HERINO R
LIGEON M
GASPARD F
ROMESTAIN R
VIAL JC
BSIESY A
Citation: F. Muller et al., PHOTOLUMINESCENCE AND ELECTROLUMINESCENCE FROM ELECTROCHEMICALLY OXIDIZED POROUS SILICON LAYERS, Journal of luminescence, 57(1-6), 1993, pp. 283-292
Authors:
LIGEON M
MULLER F
HERINO R
GASPARD F
VIAL JC
ROMESTAIN R
BILLAT S
BSIESY A
Citation: M. Ligeon et al., ANALYSIS OF THE ELECTROLUMINESCENCE OBSERVED DURING THE ANODIC-OXIDATION OF POROUS LAYERS FORMED ON LIGHTLY P-DOPED SILICON, Journal of applied physics, 74(2), 1993, pp. 1265-1271