AAAAAA

   
Results: 1-10 |
Results: 10
HETEROGENEOUS HYDRIDE PYROLYSIS IN A CHEMICAL BEAM EPITAXY CRACKER CELL AND GROWTH OF HIGH-QUALITY INP
Authors: RONGEN RTH LEYS MR VANHALL PJ VONK H WOLTER JH
Citation: Rth. Rongen et al., HETEROGENEOUS HYDRIDE PYROLYSIS IN A CHEMICAL BEAM EPITAXY CRACKER CELL AND GROWTH OF HIGH-QUALITY INP, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 15(1), 1997, pp. 29-33
INTERFACE MANIPULATION IN GAXIN1-XAS INP MULTIPLE-LAYER STRUCTURES GROWN BY CHEMICAL BEAM EPITAXY/
Authors: RONGEN RTH VANRIJSWIJK AJC LEYS MR VANES CM VONK H WOLTER JH
Citation: Rth. Rongen et al., INTERFACE MANIPULATION IN GAXIN1-XAS INP MULTIPLE-LAYER STRUCTURES GROWN BY CHEMICAL BEAM EPITAXY/, Semiconductor science and technology, 12(8), 1997, pp. 974-980
RELIABILITY ISSUES IN 650V HIGH-VOLTAGE BIPOLAR-CMOS-DMOS INTEGRATED-CIRCUITS
Authors: VANDERPOL JA GERRITSEN HJ RONGEN RTH GROENEVELD PPMC RAGAY PW VANDENHURK HA
Citation: Ja. Vanderpol et al., RELIABILITY ISSUES IN 650V HIGH-VOLTAGE BIPOLAR-CMOS-DMOS INTEGRATED-CIRCUITS, Microelectronics and reliability, 37(10-11), 1997, pp. 1723-1726
EPITAXIAL LAYER MORPHOLOGY OF HIGHLY STRAINED GAINAS INP MULTIPLE-QUANTUM-WELL STRUCTURES GROWN BY CBE/
Authors: MARSCHNER T TICHELAAR FD LEYS MR RONGEN RTH VERSCHUREN CA VONK H WOLTER JH
Citation: T. Marschner et al., EPITAXIAL LAYER MORPHOLOGY OF HIGHLY STRAINED GAINAS INP MULTIPLE-QUANTUM-WELL STRUCTURES GROWN BY CBE/, Microelectronics, 28(8-10), 1997, pp. 849-855
EFFECTS OF TENSILE STRAIN AND SUBSTRATE OFF-ORIENTATION ON THE GROWTHOF GAINAS INP MULTIPLE-QUANTUM-WELL STRUCTURES BY CBE/
Authors: MARSCHNER T RONGEN RTH LEYS MR TICHELAAR FD VONK H WOLTER JH
Citation: T. Marschner et al., EFFECTS OF TENSILE STRAIN AND SUBSTRATE OFF-ORIENTATION ON THE GROWTHOF GAINAS INP MULTIPLE-QUANTUM-WELL STRUCTURES BY CBE/, Journal of crystal growth, 175, 1997, pp. 1081-1086
SURFACE-MORPHOLOGY OF INP INGAAS IN SELECTIVE-AREA GROWTH BY CHEMICALBEAM EPITAXY/
Authors: VERSCHUREN CA LEYS MR OEI YS VREEBURG CGM VONK H RONGEN RTH WOLTER JH
Citation: Ca. Verschuren et al., SURFACE-MORPHOLOGY OF INP INGAAS IN SELECTIVE-AREA GROWTH BY CHEMICALBEAM EPITAXY/, Journal of crystal growth, 170(1-4), 1997, pp. 650-654
SUBSTITUTION OF INP LAYERS TO INAS FOR STRAIN COMPENSATION IN GAXIN1-XAS INP SUPERLATTICES/
Authors: RONGEN RTH LEYS MR VONK H WOLTER JH OEI YS
Citation: Rth. Rongen et al., SUBSTITUTION OF INP LAYERS TO INAS FOR STRAIN COMPENSATION IN GAXIN1-XAS INP SUPERLATTICES/, Journal of crystal growth, 164(1-4), 1996, pp. 263-270
STRAINED GAINAS INP MQW LAYERS GROWN BY CBE FOR OPTICAL-COMPONENTS/
Authors: VREEBURG CGM OEI YS VERBEEK BH VANDERTOL JJGM RONGEN RTH VONK H LEYS MR DORREN BHP WOLTER JH
Citation: Cgm. Vreeburg et al., STRAINED GAINAS INP MQW LAYERS GROWN BY CBE FOR OPTICAL-COMPONENTS/, Journal of crystal growth, 164(1-4), 1996, pp. 442-448
INVESTIGATIONS ON INDIUM-PHOSPHIDE GROWN BY CHEMICAL BEAM EPITAXY
Authors: RONGEN RTH LEYS MR VANHALL PJ VANES CM VONK H WOLTER JH
Citation: Rth. Rongen et al., INVESTIGATIONS ON INDIUM-PHOSPHIDE GROWN BY CHEMICAL BEAM EPITAXY, Journal of electronic materials, 24(10), 1995, pp. 1391-1398
GROWTH OF GAXIN1-XAS INP THIN-LAYER STRUCTURES BY CHEMICAL BEAM EPITAXY/
Authors: LEYS MR RONGEN RTH HOPKINS J VONK H VANES CM WOLTER JH TICHELAAR FD
Citation: Mr. Leys et al., GROWTH OF GAXIN1-XAS INP THIN-LAYER STRUCTURES BY CHEMICAL BEAM EPITAXY/, Journal of crystal growth, 150(1-4), 1995, pp. 633-637
Risultati: 1-10 |