SURFACE-MORPHOLOGY OF INP INGAAS IN SELECTIVE-AREA GROWTH BY CHEMICALBEAM EPITAXY/

In this work some aspects of embedded SAE by chemical beam epitaxy are shown. The anisotropy in growth behaviour between 0 degrees and off-o riented substrates is discussed in terms of the chemical difference be tween A- and B-type steps. The presence of B steps is beneficial for t he InP morphology; simultaneous presence of A steps gives rise to (110 ) facets, which lead to macro-step formation. From a B step up edge no new B steps are generated during growth, causing a macroscopic ripple pattern starting from this edge. The terrace lengths of these ripples are sensitive to growth conditions that influence surface mobility. F urthermore, the surface diffusion is clearly anisotropic with fast dif fusion along [0(1) over bar1$]. The morphological features can be expl ained by assuming a (2 x 4) reconstruction during growth.