Authors: RONSHEIM PA LEE KL

Citation: Pa. Ronsheim et Kl. Lee, COMPARISON OF SECONDARY-ION MASS-SPECTROMETRY PROFILING OF SUB-100 NMULTRASHALLOW JUNCTIONS USING NO2-2(+) SPUTTERING( AND O), Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 16(1), 1998, pp. 382-385

Authors: BURGHARTZ JN STANIS CL RONSHEIM PA

Citation: Jn. Burghartz et al., DOPANT INTERACTIONS DURING THE DIFFUSION OF ARSENIC AND BORON IN OPPOSITE DIRECTIONS IN POLYCRYSTALLINE MONOCRYSTALLINE SILICON STRUCTURES, Applied physics letters, 67(21), 1995, pp. 3156-3158

Authors: RONSHEIM PA TEJWANI M

Citation: Pa. Ronsheim et M. Tejwani, EFFECT OF MATRIX STOPPING POWER ON SPUTTER DEPTH PROFILE BROADENING, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 12(1), 1994, pp. 254-257

Authors: SHAHIDI GG DAVARI B BUCELOT TJ RONSHEIM PA COANE PJ POLLACK S BLAIR CR CLARK B HANSEN HH

Citation: Gg. Shahidi et al., INDIUM CHANNEL IMPLANT FOR IMPROVED SHORT-CHANNEL BEHAVIOR OF SUBMICROMETER NMOSFETS, IEEE electron device letters, 14(8), 1993, pp. 409-411

Authors: RONSHEIM PA TEJWANI M

Citation: Pa. Ronsheim et M. Tejwani, NOVEL DIFFUSION PHENOMENON OF DOPANTS IN SILICON AT LOW-TEMPERATURES - COMMENT, Physical review letters, 71(6), 1993, pp. 947-947