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Authors:
ANGERMANN H
HENRION W
REBIEN M
FISCHER D
ZETTLER JT
ROSELER A
Citation: H. Angermann et al., H-TERMINATED SILICON - SPECTROSCOPIC ELLIPSOMETRY MEASUREMENTS CORRELATED TO THE SURFACE ELECTRONIC-PROPERTIES, Thin solid films, 313, 1998, pp. 552-556
Citation: A. Roseler et Eh. Korte, THE OPTICAL-CONSTANTS OF METALLIC ISLAND FILMS AS USED FOR SURFACE-ENHANCED INFRARED-ABSORPTION, Thin solid films, 313, 1998, pp. 732-736
Citation: Eh. Korte et A. Roseler, INFRARED SPECTROSCOPIC ELLIPSOMETRY - A TOOL FOR CHARACTERIZING NANOMETER LAYERS, Analyst, 123(4), 1998, pp. 647-651
Authors:
ANGERMANN H
HENRION W
REBIEN M
ZETTLER JT
ROSELER A
Citation: H. Angermann et al., CHARACTERIZATION OF CHEMICALLY PREPARED SI-SURFACES BY UV-VIS AND IR SPECTROSCOPIC ELLIPSOMETRY AND SURFACE PHOTOVOLTAGE, Surface science, 388(1-3), 1997, pp. 15-23
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Authors:
MARKWITZ A
BAUMANN H
GRILL W
HEINZ B
ROSELER A
KRIMMEL EF
BETHGE K
Citation: A. Markwitz et al., SURFACE-NEAR ANALYSES OF ULTRA-THIN SILICON-NITRIDE LAYERS BY NRA, CHANNELING RBS, FT IR ELLIPSOMETRY AND AFM, Fresenius' journal of analytical chemistry, 353(5-8), 1995, pp. 734-739
Authors:
MICHELMANN RW
BAUMANN H
MARKWITZ A
MEYER JD
ROSELER A
KRIMMEL EF
BETHGE K
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Citation: A. Roseler et Eh. Korte, ELLIPSOMETRIC ATR SPECTROSCOPY FOR MEASURING THE INFRARED REFRACTIVE-INDEX, Journal of molecular structure, 349, 1995, pp. 321-324
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Citation: J. Humlicek et A. Roseler, IR ELLIPSOMETRY OF THE HIGHLY ANISOTROPIC MATERIALS ALPHA-SIO2 AND ALPHA-AL2O3, Thin solid films, 234(1-2), 1993, pp. 332-336
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