Authors: DERHACOBIAN N WALTON JT LUKE PN WONG YK ROSSINGTON CS

Citation: N. Derhacobian et al., PROPER INTERPRETATION OF PHOTOCONDUCTIVE DECAY TRANSIENTS IN SEMICONDUCTORS HAVING FINITE SURFACE RECOMBINATION VELOCITY, Journal of applied physics, 76(8), 1994, pp. 4663-4669

Authors: BLANKESPOOR SC DERENZO SE MOSES WW ROSSINGTON CS ITO M OBA K

Citation: Sc. Blankespoor et al., CHARACTERIZATION OF A PULSED X-RAY SOURCE FOR FLUORESCENT LIFETIME MEASUREMENTS, IEEE transactions on nuclear science, 41(4), 1994, pp. 698-702

Authors: DERHACOBIAN N FINE P WALTON JT WONG YK ROSSINGTON CS LUKE PN

Citation: N. Derhacobian et al., DETERMINATION OF SURFACE RECOMBINATION VELOCITY AND BULK LIFETIME IN DETECTOR-GRADE SILICON AND GERMANIUM-CRYSTALS, IEEE transactions on nuclear science, 41(4), 1994, pp. 1026-1030

Authors: LUKE PN ROSSINGTON CS WESELA MF

Citation: Pn. Luke et al., LOW-ENERGY X-RAY RESPONSE OF GE DETECTORS WITH AMORPHOUS-GE ENTRANCE CONTACTS, IEEE transactions on nuclear science, 41(4), 1994, pp. 1074-1079

Authors: ROSSINGTON CS FINE PM MADDEN NW

Citation: Cs. Rossington et al., LARGE-AREA, LOW CAPACITANCE SI(LI) DETECTORS FOR HIGH-RATE X-RAY APPLICATIONS, IEEE transactions on nuclear science, 40(4), 1993, pp. 354-359