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Results: 51-59/59
Authors:
RYZHII V
KHMYROVA I
Citation: V. Ryzhii et I. Khmyrova, BISTABILITY EFFECT IN LASER-TRANSISTOR RESONANT-TUNNELING STRUCTURE, Solid-state electronics, 37(4-6), 1994, pp. 1259-1262
Authors:
KHRENOV G
RYZHII V
KARTASHOVA O
Citation: G. Khrenov et al., ENSEMBLE MONTE-CARLO PARTICLE SIMULATION OF NONUNIFORMLY DOPED SUBMICROMETER GUNN-DIODES, Solid-state electronics, 37(10), 1994, pp. 1789-1790
Authors:
PANKRATOV V
RYZHII V
Citation: V. Pankratov et V. Ryzhii, MONTE-CARLO SIMULATION OF GATE LEAKAGE CURRENT EFFECT IN P-CHANNEL GAAS AL0.7GA0.3AS HIGFET, Solid-state electronics, 37(1), 1994, pp. 211-212
Authors:
KHRENOV G
RYZHII V
KARTASHOV S
Citation: G. Khrenov et al., ALGAAS GAAS HBT COLLECTOR OPTIMIZATION FOR HIGH-FREQUENCY PERFORMANCE, Solid-state electronics, 37(1), 1994, pp. 213-214
Authors:
ERSHOV M
RYZHII V
Citation: M. Ershov et V. Ryzhii, PROCEDURE FOR FITTING MONTE-CARLO CALCULATED IMPACT IONIZATION COEFFICIENT TO EXPERIMENT, Journal of applied physics, 76(3), 1994, pp. 1672-1675
Authors:
ERSHOV M
RYZHII V
Citation: M. Ershov et V. Ryzhii, MONTE-CARLO STUDY OF ELECTRON-TRANSPORT IN STRAINED SILICON-CARBON ALLOY, Journal of applied physics, 76(3), 1994, pp. 1924-1926
Authors:
FEDICHKIN L
RYZHII V
VYURKOV V
Citation: L. Fedichkin et al., THE PHOTOVOLTAIC EFFECT IN NONUNIFORM QUANTUM WIRES, Journal of physics. Condensed matter, 5(33), 1993, pp. 6091-6097
Authors:
KHRENOV G
RYZHII V
ZHAKHAROVA A
Citation: G. Khrenov et al., NEGATIVE DIFFERENTIAL RESISTANCE OF SINGLE BARRIER INTERBAND TUNNELING DIODES, Solid-state electronics, 36(9), 1993, pp. 1325-1333
Authors:
RYZHII V
KHMYROVA I
Citation: V. Ryzhii et I. Khmyrova, INTERVALLEY MECHANISM OF NEGATIVE DIFFERENCE CONDUCTANCE OF DOUBLE-HETEROJUNCTION BIPOLAR-TRANSISTORS, Semiconductor science and technology, 6(8), 1991, pp. 771-776