MONTE-CARLO SIMULATION OF GATE LEAKAGE CURRENT EFFECT IN P-CHANNEL GAAS AL0.7GA0.3AS HIGFET

Authors
PANKRATOV V RYZHII V
Citation
V. Pankratov et V. Ryzhii, MONTE-CARLO SIMULATION OF GATE LEAKAGE CURRENT EFFECT IN P-CHANNEL GAAS AL0.7GA0.3AS HIGFET, Solid-state electronics, 37(1), 1994, pp. 211-212
Citations number
6
Categorie Soggetti
Engineering, Eletrical & Electronic","Physics, Applied","Physics, Condensed Matter
Journal title
Solid-state electronics → ACNP
ISSN journal
00381101
Volume
37
Issue
1
Year of publication
1994
Pages
211 - 212
Database
ISI
SICI code
0038-1101(1994)37:1<211:MSOGLC>2.0.ZU;2-M