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Results: 1-8 |
Results: 8
Dopant redistribution and formation of electrically active complexes in SiGe
Authors: Kuznetsov, AY Christensen, JS Monakhov, EV Lindgren, AC Radamson, HH Nylandsted-Larsen, A Svensson, BG
Citation: Ay. Kuznetsov et al., Dopant redistribution and formation of electrically active complexes in SiGe, MAT SC S PR, 4(1-3), 2001, pp. 217-223
Loading effect in SiGe layers grown by dichlorosilane- and silane-based epitaxy
Authors: Menon, C Bentzen, A Radamson, HH
Citation: C. Menon et al., Loading effect in SiGe layers grown by dichlorosilane- and silane-based epitaxy, J APPL PHYS, 90(9), 2001, pp. 4805-4809
A low-complexity 62-GHz f(T) SiGe heterojunction bipolar transistor process using differential epitaxy and in situ phosphorus-doped poly-Si emitter at very low thermal budget
Authors: Grahn, JV Fosshaug, H Jargelius, M Jonsson, P Linder, M Malm, BG Mohadjeri, B Pejnefors, J Radamson, HH Sanden, M Wang, YB Landgren, G Ostling, M
Citation: Jv. Grahn et al., A low-complexity 62-GHz f(T) SiGe heterojunction bipolar transistor process using differential epitaxy and in situ phosphorus-doped poly-Si emitter at very low thermal budget, SOL ST ELEC, 44(3), 2000, pp. 549-554
Chemical vapor deposition of undoped and in-situ boron- and arsenic-doped epitaxial and polycrystalline silicon films grown using silane at reduced pressure
Authors: Pejnefors, J Zhang, SL Radamson, HH Grahn, JV Ostling, M
Citation: J. Pejnefors et al., Chemical vapor deposition of undoped and in-situ boron- and arsenic-doped epitaxial and polycrystalline silicon films grown using silane at reduced pressure, J APPL PHYS, 88(3), 2000, pp. 1655-1663
Characteristics of Si delta-layers embedded in GaAs
Authors: Pozina, G Holtz, PO Sernelius, B Buyanov, AV Radamson, HH Madsen, LD Monemar, B Thordson, J Andersson, TG
Citation: G. Pozina et al., Characteristics of Si delta-layers embedded in GaAs, PHYS SCR, T79, 1999, pp. 99-102
Comparison of strain relaxation in Si/SiGe/Si heterostructures after annealing in oxidizing and inert atmospheres
Authors: Kuznetsov, AY Radamson, HH Svensson, BG Ni, WX Hansson, GV Larsen, AN
Citation: Ay. Kuznetsov et al., Comparison of strain relaxation in Si/SiGe/Si heterostructures after annealing in oxidizing and inert atmospheres, PHYS SCR, T79, 1999, pp. 202-205
Liquid phase epitaxial growth of SiC
Authors: Syvajarvi, M Yakimova, R Radamson, HH Son, NT Wahab, Q Ivanov, IG Janzen, E
Citation: M. Syvajarvi et al., Liquid phase epitaxial growth of SiC, J CRYST GR, 197(1-2), 1999, pp. 147-154
Si delta-layers embedded in GaAs
Authors: Holtz, PO Sernelius, B Buyanov, AV Pozina, G Radamson, HH Madsen, LD McCaffrey, JP Monemar, B Thordson, J Andersson, TG
Citation: Po. Holtz et al., Si delta-layers embedded in GaAs, APPL PHYS L, 73(25), 1998, pp. 3709-3711
Risultati: 1-8 |