Authors:
Grahn, JV
Fosshaug, H
Jargelius, M
Jonsson, P
Linder, M
Malm, BG
Mohadjeri, B
Pejnefors, J
Radamson, HH
Sanden, M
Wang, YB
Landgren, G
Ostling, M
Citation: Jv. Grahn et al., A low-complexity 62-GHz f(T) SiGe heterojunction bipolar transistor process using differential epitaxy and in situ phosphorus-doped poly-Si emitter at very low thermal budget, SOL ST ELEC, 44(3), 2000, pp. 549-554
Citation: J. Pejnefors et al., Chemical vapor deposition of undoped and in-situ boron- and arsenic-doped epitaxial and polycrystalline silicon films grown using silane at reduced pressure, J APPL PHYS, 88(3), 2000, pp. 1655-1663
Authors:
Kuznetsov, AY
Radamson, HH
Svensson, BG
Ni, WX
Hansson, GV
Larsen, AN
Citation: Ay. Kuznetsov et al., Comparison of strain relaxation in Si/SiGe/Si heterostructures after annealing in oxidizing and inert atmospheres, PHYS SCR, T79, 1999, pp. 202-205