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Results: 26-31/31
Authors:
Iacona, F
Raineri, V
La Via, F
Privitera, V
Gasparotto, A
Rimini, E
Citation: F. Iacona et al., Thermal oxidation of high dose aluminum implanted silicon, J ELCHEM SO, 147(7), 2000, pp. 2762-2765
Authors:
Giannazzo, F
Priolo, F
Raineri, V
Privitera, V
Citation: F. Giannazzo et al., High-resolution scanning capacitance microscopy of silicon devices by surface beveling, APPL PHYS L, 76(18), 2000, pp. 2565-2567
Authors:
Raineri, V
Coffa, S
Saggio, M
Frisina, F
Rimini, E
Citation: V. Raineri et al., Radiation damage He interaction in He implanted Si during bubble formationand their evolution in voids, NUCL INST B, 147(1-4), 1999, pp. 292-297
Authors:
Alberti, A
La Via, F
Raineri, V
Rimini, E
Citation: A. Alberti et al., Thermal stability of cobalt silicide stripes on Si (001), J APPL PHYS, 86(6), 1999, pp. 3089-3095
Authors:
Raineri, V
Saggio, M
Frisina, F
Rimini, E
Citation: V. Raineri et al., Voids in silicon power devices, SOL ST ELEC, 42(12), 1998, pp. 2295-2301
Authors:
Mannino, G
Priolo, F
Privitera, V
Raineri, V
Spinella, C
Napolitani, E
Carnera, A
Arena, G
Messina, A
Rapisarda, C
Citation: G. Mannino et al., Plasma processing of the silicon surface: A novel method to reduce transient enhanced diffusion of boron, J APPL PHYS, 84(12), 1998, pp. 6628-6635