Authors: Kosyachenko, LA Markov, AV Ostapov, SE Rarenko, IM

Citation: La. Kosyachenko et al., Generation-recombination and diffusion currents in HgMnTe n(+)-p junctions, SEMICONDUCT, 35(11), 2001, pp. 1270-1278

Authors: Bodnaruk, OA Markov, AV Ostapov, SE Rarenko, IM Slonetskii, AF

Citation: Oa. Bodnaruk et al., Bandgap and intrinsic carrier concentration in HgCdMnTe and HgCdZnTe, SEMICONDUCT, 34(4), 2000, pp. 415-417

Authors: Kosyachenko, LA Rarenko, IM Sun, WG Lu, ZX

Citation: La. Kosyachenko et al., Charge transport mechanisms in HgMnTe photodiodes with ion etched p-n junctions, SOL ST ELEC, 44(7), 2000, pp. 1197-1202

Authors: Deibuk, VG Viklyuk, YI Rarenko, IM

Citation: Vg. Deibuk et al., Calculating the band structure of InSb1-xBix solid solutions, SEMICONDUCT, 33(3), 1999, pp. 293-296

Authors: Kosyachenko, LA Rarenko, IM Bodnaruk, OA Sun, WG

Citation: La. Kosyachenko et al., Electrical properties of Hg1-xMnxTe-based photodiodes, SEMICONDUCT, 33(12), 1999, pp. 1293-1296