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Results:
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Results: 2
Bragg and Laue x-ray diffraction study of dislocations in thick hydride vapor phase epitaxy GaN films
Authors:
Ratnikov, V Kyutt, R Shubina, T Paskova, T Valcheva, E Monemar, B
Citation:
V. Ratnikov et al., Bragg and Laue x-ray diffraction study of dislocations in thick hydride vapor phase epitaxy GaN films, J APPL PHYS, 88(11), 2000, pp. 6252-6259
Structural characterization and strain relaxation in porous GaN layers
Authors:
Mynbaeva, M Titkov, A Kryganovskii, A Ratnikov, V Mynbaev, K Huhtinen, H Laiho, R Dmitriev, V
Citation:
M. Mynbaeva et al., Structural characterization and strain relaxation in porous GaN layers, APPL PHYS L, 76(9), 2000, pp. 1113-1115
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1-2
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