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Results:
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Results: 15
Authors:
Astrova, EV
Ratnikov, VV
Remenyuk, AD
Tkachenko, AG
Shul'pina, IL
Citation: Ev. Astrova et al., Real structure of a microchannel silicon studied by X-ray diffraction, TECH PHYS L, 27(1), 2001, pp. 41-44
Authors:
Ratnikov, VV
Mamutin, VV
Vekshin, VA
Ivanov, SV
Citation: Vv. Ratnikov et al., X-ray diffractometric study of the influence of a buffer layer on the microstructure of molecular-beam epitaxial InN layers of different thicknesses, PHYS SOL ST, 43(5), 2001, pp. 949-954
X-ray diffraction study of changes in the CdTe monocrystal real structure induced by laser radiation
Authors:
Shul'pina, IL
Ratnikov, VV
Matveev, OA
Citation: Il. Shul'Pina et al., X-ray diffraction study of changes in the CdTe monocrystal real structure induced by laser radiation, PHYS SOL ST, 43(3), 2001, pp. 579-582
Authors:
Savkina, NS
Ratnikov, VV
Shuman, VB
Citation: Ns. Savkina et al., The effect of high-temperature epitaxial SiC layer growth on the structureof porous silicon carbide, SEMICONDUCT, 35(2), 2001, pp. 153-157
Authors:
Ratnikov, VV
Kyutt, RN
Shubina, TV
Paskova, T
Monemar, B
Citation: Vv. Ratnikov et al., Determination of microdistortion components and their application to structural characterization of HVBE GaN epitaxial layers, J PHYS D, 34(10A), 2001, pp. A30-A34
Authors:
Shul'pina, IL
Astrova, EV
Ratnikov, VV
Remenyuk, AD
Tkachenko, AG
Citation: Il. Shul'Pina et al., Characterization of microchannel Si by HRXD and topography, J PHYS D, 34(10A), 2001, pp. A140-A143
Authors:
Ratnikov, VV
Kyutt, RN
Shubina, TV
Citation: Vv. Ratnikov et al., X-ray measurement of a microdistortion tensor and its application in an analysis of the dislocation structure of thick GaN layers obtained by hydrochloride gaseous-phase epitaxy, PHYS SOL ST, 42(12), 2000, pp. 2204-2210
Authors:
Mamutin, VV
Shubina, TV
Vekshin, VA
Ratnikov, VV
Toropov, AA
Ivanov, SV
Karlsteen, M
Sodervall, U
Willander, M
Citation: Vv. Mamutin et al., Hexagonal InN/sapphire heterostructures: interplay of interface and layer properties, APPL SURF S, 166(1-4), 2000, pp. 87-91
Authors:
Kyutt, RN
Ratnikov, VV
Mosina, GN
Shcheglov, MP
Citation: Rn. Kyutt et al., Structural perfection of GaN epitaxial layers according to x-ray diffraction measurements, PHYS SOL ST, 41(1), 1999, pp. 25-31
Authors:
Shmidt, NM
Lebedev, AV
Lundin, WV
Pushnyi, BV
Ratnikov, VV
Shubina, TV
Tsatsul'nikov, AA
Usikov, AS
Pozina, G
Monemar, B
Citation: Nm. Shmidt et al., Effect of Si doping on structural, photoluminescence and electrical properties of GaN, MAT SCI E B, 59(1-3), 1999, pp. 195-197
Authors:
Shubina, TV
Mamutin, VV
Vekshin, VA
Ratnikov, VV
Toropov, AA
Sitnikova, AA
Ivanov, SV
Karlsteen, M
Sodervall, U
Willander, M
Pozina, G
Bergman, JP
Monemar, B
Citation: Tv. Shubina et al., Optical properties of an AlInN interface layer spontaneously formed in hexagonal InN/sapphire heterostructures, PHYS ST S-B, 216(1), 1999, pp. 205-209
Authors:
Shmidt, NM
Emtsev, VV
Kryzhanovsky, AS
Kyutt, RN
Lundin, WV
Poloskin, DS
Ratnikov, VV
Sakharov, AV
Titkov, AN
Usikov, AS
Girard, P
Citation: Nm. Shmidt et al., Mosaic structure and Si doping related peculiarities of charge carrier transport in III-V nitrides, PHYS ST S-B, 216(1), 1999, pp. 581-586
Authors:
Mamutin, VV
Vekshin, VA
Davydov, VY
Ratnikov, VV
Shubina, TV
Ivanov, SV
Kopev, PS
Karlsteen, M
Soderwall, U
Willander, M
Citation: Vv. Mamutin et al., MBE growth of hexagonal InN films on sapphire with different initial growth stages, PHYS ST S-A, 176(1), 1999, pp. 247-252
Authors:
Mamutin, VV
Vekshin, VA
Davydov, VY
Ratnikov, VV
Kudriavtsev, YA
Ber, BY
Emtsev, VV
Ivanov, SV
Citation: Vv. Mamutin et al., Mg-doped hexagonal InN/Al2O3 films grown by MBE, PHYS ST S-A, 176(1), 1999, pp. 373-378
Authors:
Mamutin, VV
Sorokin, SV
Jmerik, VN
Shubina, TV
Ratnikov, VV
Ivanov, SV
Kop'ev, PS
Karlsteen, M
Sodervall, U
Willander, M
Citation: Vv. Mamutin et al., Plasma-assisted MBE growth of GaN and InGaN on different substrates, J CRYST GR, 202, 1999, pp. 346-350
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