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Results:
1-12
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Results: 12
Authors:
Missaoui, A
Saadoun, M
Boufaden, T
Bessais, B
Rebey, A
Ezzaouia, H
El Jani, B
Citation: A. Missaoui et al., Characterization of GaN layers grown on porous silicon, MAT SCI E B, 82(1-3), 2001, pp. 98-101
Authors:
Halidou, I
Boufaden, T
Touhami, A
Rebey, A
El Jani, B
Citation: I. Halidou et al., Annealing effect on GaN buffer layer surface, PHYS ST S-A, 184(1), 2001, pp. 263-271
Authors:
Missaoui, A
Saadoun, M
Ezzaouia, H
Bessais, B
Boufaden, T
Rebey, A
El Jani, B
Citation: A. Missaoui et al., Growth of GaN films on porous silicon by MOVPE, PHYS ST S-A, 182(1), 2000, pp. 189-193
Authors:
Rziga-Ouaja, F
Mejri, H
Triki, A
Selmi, A
Rebey, A
Citation: F. Rziga-ouaja et al., Statistical analysis in the negative-U model of donors in AlxGa1-xAs : Si, J APPL PHYS, 88(5), 2000, pp. 2583-2587
Authors:
Rebey, A
El Jani, B
Leycuras, A
Laugt, S
Gibart, P
Citation: A. Rebey et al., In situ optical monitoring of metalorganic vapor phase epitaxy growth of C-doped GaAs, APPL PHYS A, 68(3), 1999, pp. 349-352
Authors:
Boufaden, T
Rebey, A
Halidou, I
Chine, Z
Haffouz, S
El Jani, B
Citation: T. Boufaden et al., The GaN growth by a hot filament metalorganic vapor phase deposition technique, PHYS ST S-A, 176(1), 1999, pp. 411-414
Authors:
Bchetnia, A
Rebey, A
Boufaden, T
El Jani, B
Citation: A. Bchetnia et al., Thermodynamic analysis of growth rate reduction by VCl4 during metalorganic vapor-phase epitaxy of GaAs, J CRYST GR, 207(1-2), 1999, pp. 15-19
Authors:
Boufaden, T
Rebey, A
El Jani, B
Citation: T. Boufaden et al., Hot filament assisted metalorganic vapor-phase deposition of GaN, J CRYST GR, 206(1-2), 1999, pp. 1-7
Authors:
Rebey, A
Boufaden, T
El Jani, B
Citation: A. Rebey et al., In situ optical monitoring of the decomposition of GaN thin films, J CRYST GR, 203(1-2), 1999, pp. 12-17
Authors:
Beji, L
Rebey, A
El Jani, B
Citation: L. Beji et al., Incorporation modes of silicon in GaAs: Si grown by metalorganic vapor phase epitaxy, EPJ-APPL PH, 4(3), 1998, pp. 269-273
Authors:
Rebey, A
Bchetnia, A
El Jani, B
Citation: A. Rebey et al., Etching of GaAs by CCl4 and VCl4 in a metalorganic vapor-phase epitaxy reactor, J CRYST GR, 194(3-4), 1998, pp. 286-291
Authors:
Rebey, A
Bchetnia, A
Benjeddou, C
El Jani, B
Gibart, P
Citation: A. Rebey et al., New vanadium dopant precursor for GaAs growth by metalorganic vapor-phase epitaxy, J CRYST GR, 194(3-4), 1998, pp. 292-296
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1-12
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