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Results: 1-11 |
Results: 11
Understanding the effects of wave function penetration on the inversion layer capacitance of NMOSFETs
Authors: Mudanai, S Register, LF Tasch, AF Banerjee, SK
Citation: S. Mudanai et al., Understanding the effects of wave function penetration on the inversion layer capacitance of NMOSFETs, IEEE ELEC D, 22(3), 2001, pp. 145-147
Built-in longitudinal field effects in sub-100-nm graded Si1-xGex channel PMOSFETs
Authors: Ouyang, QQC Chen, XD Tasch, AF Register, LF Banerjee, SK
Citation: Qqc. Ouyang et al., Built-in longitudinal field effects in sub-100-nm graded Si1-xGex channel PMOSFETs, IEEE DEVICE, 48(6), 2001, pp. 1245-1250
Tight-binding investigation of electron tunneling through ultrathin SiO2 gate oxides
Authors: Stadele, M Tuttle, BR Hess, K Register, LF
Citation: M. Stadele et al., Tight-binding investigation of electron tunneling through ultrathin SiO2 gate oxides, SUPERLATT M, 27(5-6), 2000, pp. 405-409
Hydrogen-related defect creation at the Si(100)-SiO2 interface of metal-oxide-semiconductor field effect transistors during hot electron stress
Authors: Tuttle, BR Hess, K Register, LF
Citation: Br. Tuttle et al., Hydrogen-related defect creation at the Si(100)-SiO2 interface of metal-oxide-semiconductor field effect transistors during hot electron stress, SUPERLATT M, 27(5-6), 2000, pp. 441-445
Monte Carlo simulation of electron transport in simple orthorhombically strained silicon
Authors: Wang, X Kencke, DL Liu, KC Tasch, AF Register, LF Banerjee, SK
Citation: X. Wang et al., Monte Carlo simulation of electron transport in simple orthorhombically strained silicon, J APPL PHYS, 88(8), 2000, pp. 4717-4724
Improved algorithm for modeling collision broadening through a sequence ofscattering events in semiclassical Monte Carlo
Authors: Register, LF Hess, K
Citation: Lf. Register et K. Hess, Improved algorithm for modeling collision broadening through a sequence ofscattering events in semiclassical Monte Carlo, J APPL PHYS, 87(1), 2000, pp. 303-311
A novel Si/SiGe heterojunction pMOSFET with reduced short-channel effects and enhanced drive current
Authors: Ouyang, QQ Chen, XD Mudanai, SP Wang, X Kencke, DL Tasch, AF Register, LF Banerjee, SK
Citation: Qq. Ouyang et al., A novel Si/SiGe heterojunction pMOSFET with reduced short-channel effects and enhanced drive current, IEEE DEVICE, 47(10), 2000, pp. 1943-1949
Theory of channel hot-carrier degradation in MOSFETs
Authors: Hess, K Register, LF McMahon, W Tuttle, B Aktas, O Ravaioli, U Lyding, JW Kizilyalli, IC
Citation: K. Hess et al., Theory of channel hot-carrier degradation in MOSFETs, PHYSICA B, 272(1-4), 1999, pp. 527-531
Theory of collision broadening through a sequence of scattering events with applications to semiclassical Monte Carlo
Authors: Register, LF Hess, K
Citation: Lf. Register et K. Hess, Theory of collision broadening through a sequence of scattering events with applications to semiclassical Monte Carlo, MICROEL ENG, 47(1-4), 1999, pp. 353-355
Analytic model for direct tunneling current in polycrystalline silicon-gate metal-oxide-semiconductor devices
Authors: Register, LF Rosenbaum, E Yang, K
Citation: Lf. Register et al., Analytic model for direct tunneling current in polycrystalline silicon-gate metal-oxide-semiconductor devices, APPL PHYS L, 74(3), 1999, pp. 457-459
Self-consistent Green's function approach to the analysis of dielectrically apertured vertical-cavity surface-emitting lasers
Authors: Klein, B Register, LF Hess, K Deppe, DG Deng, Q
Citation: B. Klein et al., Self-consistent Green's function approach to the analysis of dielectrically apertured vertical-cavity surface-emitting lasers, APPL PHYS L, 73(23), 1998, pp. 3324-3326
Risultati: 1-11 |