ACNP - Italian Periodicals Catalogue

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Results: 1-12 |

Results: 12

Light-induced creation of metastable defects in hydrogenated amorphous silicon carbide

Authors: Reitano, R Baeri, A Foti, G

Citation: R. Reitano et al., Light-induced creation of metastable defects in hydrogenated amorphous silicon carbide, PHIL MAG B, 81(6), 2001, pp. 629-636

Room temperature blue light emission from ECR-CVD deposited nano-crystalline SiC

Authors: Reitano, R Foti, G Pirri, CF Giorgis, F Mandracci, P

Citation: R. Reitano et al., Room temperature blue light emission from ECR-CVD deposited nano-crystalline SiC, MAT SCI E C, 15(1-2), 2001, pp. 299-302

Optical and structural properties of SiC layers grown by an electron cyclotron resonance CVD technique

Authors: Giorgis, F Chiodoni, A Cicero, G Ferrero, S Mandracci, P Barucca, G Reitano, R Musumeci, P

Citation: F. Giorgis et al., Optical and structural properties of SiC layers grown by an electron cyclotron resonance CVD technique, DIAM RELAT, 10(3-7), 2001, pp. 1264-1267

Angular distortion of Si clusters in a-SiC

Authors: Musumeci, P Roccaforte, F Reitano, R

Citation: P. Musumeci et al., Angular distortion of Si clusters in a-SiC, EUROPH LETT, 55(5), 2001, pp. 674-678

Growth and characterization of SiC layers obtained by microwave-CVD

Authors: Mandracci, P Ferrero, S Cicero, G Giorgis, F Pirri, CF Barucca, G Reitano, R Musumeci, P Calcagno, L Foti, G

Citation: P. Mandracci et al., Growth and characterization of SiC layers obtained by microwave-CVD, THIN SOL FI, 383(1-2), 2001, pp. 169-171

Photoluminescence yield and decay time of proton irradiated and thermally annealed a-Si0.35C0.65 : H alloys: A phenomenological model

Authors: Baeri, P Malvezzi, AM Reitano, R

Citation: P. Baeri et al., Photoluminescence yield and decay time of proton irradiated and thermally annealed a-Si0.35C0.65 : H alloys: A phenomenological model, J APPL PHYS, 90(2), 2001, pp. 682-688

Ion-beam processing of hydrogenated amorphous silicon carbide grown by plasma-enhanced chemical vapour deposition

Authors: Calcagno, L Giorgis, F Makhtari, A Musumeci, P Reitano, R

Citation: L. Calcagno et al., Ion-beam processing of hydrogenated amorphous silicon carbide grown by plasma-enhanced chemical vapour deposition, PHIL MAG B, 80(4), 2000, pp. 539-546

Time resolved photoluminescence in keV proton irradiated a-SiC : H alloys

Authors: Baeri, A Reitano, R Malvezzi, AM Arena, C

Citation: A. Baeri et al., Time resolved photoluminescence in keV proton irradiated a-SiC : H alloys, NUCL INST B, 166, 2000, pp. 426-430

Oscillator strength and effective charge in amorphous silicon carbon alloy

Authors: Reitano, R Foti, G

Citation: R. Reitano et G. Foti, Oscillator strength and effective charge in amorphous silicon carbon alloy, SOL ST COMM, 115(7), 2000, pp. 375-378

Fast melting of amorphous silicon carbide induced by nanosecond laser pulse

Authors: Baeri, P Spinella, C Reitano, R

Citation: P. Baeri et al., Fast melting of amorphous silicon carbide induced by nanosecond laser pulse, INT J THERM, 20(4), 1999, pp. 1211-1221

Luminescence quenching in 150 keV proton irradiated a-SiC : H

Authors: Reitano, R Musumeci, P Baeri, P Foti, G

Citation: R. Reitano et al., Luminescence quenching in 150 keV proton irradiated a-SiC : H, NUCL INST B, 148(1-4), 1999, pp. 578-582

EPR study of a-Si structural relaxations

Authors: Pivac, B Rakvin, B Reitano, R

Citation: B. Pivac et al., EPR study of a-Si structural relaxations, NUCL INST B, 147(1-4), 1999, pp. 132-135

Risultati: 1-12 |