Authors:
Chaudhuri, J
Ignatiev, C
Stepanov, S
Tsvetkov, D
Cherenkov, A
Dmitriev, V
Rek, Z
Citation: J. Chaudhuri et al., High quality GaN layers grown by hydride vapor phase epitaxy - a high resolution X-ray diffractometry and synchrotron X-ray topography study, MAT SCI E B, 78(1), 2000, pp. 22-27
Authors:
Chaudhuri, J
Ignatiev, K
Edgar, JH
Xie, ZY
Gao, Y
Rek, Z
Citation: J. Chaudhuri et al., Low temperature chemical vapor deposition of 3C-SiC on 6H-SiC - high resolution X-ray diffractometry and synchrotron X-ray topography study, MAT SCI E B, 76(3), 2000, pp. 217-224
Citation: Z. Rek et B. Sarler, Analytical integration of elliptic 2D fundamental solution and its derivatives for straight-line elements with constant interpolation, ENG ANAL, 23(5-6), 1999, pp. 515-525