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Results: 1-11 |
Results: 11
Efficient and robust algorithms for Monte Carlo and e-beam lithography simulation
Authors: Ivin, VV Silakov, MV Vorotnikova, NV Resnick, DJ Nordquist, KN Siragusa, L
Citation: Vv. Ivin et al., Efficient and robust algorithms for Monte Carlo and e-beam lithography simulation, MICROEL ENG, 57-8, 2001, pp. 355-360
Large area electron scattering effects on SCALPEL mask critical dimension control
Authors: Nordquist, K Resnick, DJ Ivin, V Mangat, P Lu, B Masnyj, Z Ainley, E Dauksher, WJ Mancini, D Silakov, M Minyushkin, D Vorotnikova, N
Citation: K. Nordquist et al., Large area electron scattering effects on SCALPEL mask critical dimension control, MICROEL ENG, 57-8, 2001, pp. 505-510
Deep silicon etch modeling for fabrication of 200-mm SCALPEL masks
Authors: Dauksher, WJ Clemens, SB Resnick, DJ Smith, KH Mangat, PJS Rauf, S Ventzek, PLG Arunachalam, V Ramamurthi, BN Ashraf, H Lea, L Hall, S Johnston, IR Hopkins, J Bhardwaj, JK
Citation: Wj. Dauksher et al., Deep silicon etch modeling for fabrication of 200-mm SCALPEL masks, MICROEL ENG, 57-8, 2001, pp. 607-612
Critical dimension issues for 200 mm electron projection masks
Authors: Resnick, DJ Nordquist, K Dauksher, WJ Ainley, E Lu, B Mangat, P Weisbrod, E Martin, C Chang, J Englestad, R Lovell, E Ivin, V
Citation: Dj. Resnick et al., Critical dimension issues for 200 mm electron projection masks, JPN J A P 1, 39(12B), 2000, pp. 6874-6880
TaSiN thin-film pattern transfer optimization for 200 mm SCALPEL and extreme ultraviolet lithography masks
Authors: Dauksher, WJ Resnick, DJ Clemens, SB Standfast, DL Masnyj, ZS Wasson, JR Bergmann, NM Han, SI Mangat, PJS
Citation: Wj. Dauksher et al., TaSiN thin-film pattern transfer optimization for 200 mm SCALPEL and extreme ultraviolet lithography masks, J VAC SCI B, 18(6), 2000, pp. 3232-3236
Inter and intramembrane resist critical dimension uniformity across a SCALPEL mask
Authors: Nordquist, K Ainley, E Resnick, DJ Weisbrod, E Martin, C Engelstad, R Masnyj, Z Mangat, P
Citation: K. Nordquist et al., Inter and intramembrane resist critical dimension uniformity across a SCALPEL mask, J VAC SCI B, 18(6), 2000, pp. 3242-3247
Etch characteristics of giant magnetoresistive materials
Authors: Resnick, DJ Pendharkar, S Kyler, K Kerszykowski, G Clemens, S Tompkins, H Durlam, M Tehrani, S
Citation: Dj. Resnick et al., Etch characteristics of giant magnetoresistive materials, MICROEL ENG, 53(1-4), 2000, pp. 367-370
Extreme ultraviolet lithography mask patterning and printability studies with a Ta-based absorber
Authors: Mangat, PJS Hector, SD Thompson, MA Dauksher, WJ Cobb, J Cummings, KD Mancini, DP Resnick, DJ Cardinale, G Henderson, C Kearney, P Wedowski, M
Citation: Pjs. Mangat et al., Extreme ultraviolet lithography mask patterning and printability studies with a Ta-based absorber, J VAC SCI B, 17(6), 1999, pp. 3029-3033
Process optimization of a chemically amplified negative resist for electron beam exposure and mask making applications
Authors: Ainley, E Nordquist, K Resnick, DJ Carr, DW Tiberio, RC
Citation: E. Ainley et al., Process optimization of a chemically amplified negative resist for electron beam exposure and mask making applications, MICROEL ENG, 46(1-4), 1999, pp. 375-378
Comparison of negative resists for 100 nm electron-beam direct write and mask making applications
Authors: Nordquist, KJ Resnick, DJ Ainley, ES
Citation: Kj. Nordquist et al., Comparison of negative resists for 100 nm electron-beam direct write and mask making applications, J VAC SCI B, 16(6), 1998, pp. 3289-3293
Temperature gradients during absorber etching and their effect on x-ray mask patterning
Authors: Pendharkar, SV Resnick, DJ Laudon, MF Dauksher, WJ Mangat, PJS Seese, PA Cummings, KD
Citation: Sv. Pendharkar et al., Temperature gradients during absorber etching and their effect on x-ray mask patterning, J VAC SCI B, 16(6), 1998, pp. 3500-3503
Risultati: 1-11 |