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Results: 1-12 |
Results: 12
High-temperature semiconductor gas sensors
Authors: Bene, R Pinter, Z Perczel, IV Fleischer, M Reti, F
Citation: R. Bene et al., High-temperature semiconductor gas sensors, VACUUM, 61(2-4), 2001, pp. 275-278
Study of oxide semiconductor sensor materials by selected methods
Authors: Kiss, G Pinter, Z Perczel, IV Sassi, Z Reti, F
Citation: G. Kiss et al., Study of oxide semiconductor sensor materials by selected methods, THIN SOL FI, 391(2), 2001, pp. 216-223
Impedance spectroscopic and secondary ion mass spectrometric studies of beta-Ga2O3/O-2 interaction
Authors: Kiss, G Krafcsik, OH Kovacs, K Josepovits, VK Fleischer, M Meixner, H Deak, P Reti, F
Citation: G. Kiss et al., Impedance spectroscopic and secondary ion mass spectrometric studies of beta-Ga2O3/O-2 interaction, THIN SOL FI, 391(2), 2001, pp. 239-242
Thermal behaviour of WO3 and WO3/TiO2 materials
Authors: Pinter, Z Sassi, Z Kornely, S Pion, C Perczel, IV Kovacs, K Bene, R Bureau, JC Reti, F
Citation: Z. Pinter et al., Thermal behaviour of WO3 and WO3/TiO2 materials, THIN SOL FI, 391(2), 2001, pp. 243-246
Chemical reactions in the detection of acetone and NO by a CeO2 thin film
Authors: Bene, R Perczel, IV Reti, F Meyer, FA Fleisher, M Meixner, H
Citation: R. Bene et al., Chemical reactions in the detection of acetone and NO by a CeO2 thin film, SENS ACTU-B, 71(1-2), 2000, pp. 36-41
Examination of the CO/Pt/Cu layer structure with Kelvin probe and XPS analysis
Authors: Kiss, G Varhegyi, EB Mizsei, J Krafcsik, OH Kovacs, K Negyesi, G Ostrick, B Meixner, H Reti, F
Citation: G. Kiss et al., Examination of the CO/Pt/Cu layer structure with Kelvin probe and XPS analysis, SENS ACTU-B, 68(1-3), 2000, pp. 240-243
Thermodynamic approach to the redistribution of boron and fluorine implanted at the interface of an SiO2/Si system
Authors: Reti, F Sassi, Z Kaabi, L Bureau, JC Vincent, H Balland, B
Citation: F. Reti et al., Thermodynamic approach to the redistribution of boron and fluorine implanted at the interface of an SiO2/Si system, SURF INT AN, 30(1), 2000, pp. 387-390
Impedance spectroscopic studies of the electric conduction in polycrystalline beta-Ga2O3
Authors: Kiss, G Kovacs, K Perczel, IV Josepovits, VK Fleischer, M Meixner, H Reti, F
Citation: G. Kiss et al., Impedance spectroscopic studies of the electric conduction in polycrystalline beta-Ga2O3, J ELCHEM SO, 147(7), 2000, pp. 2644-2646
Effect of surface oxidation on the solution of hydrogen in vanadium
Authors: Kiss, G Paulus, H Krafcsik, O Reti, F Muller, KH Giber, J
Citation: G. Kiss et al., Effect of surface oxidation on the solution of hydrogen in vanadium, FRESEN J AN, 365(1-3), 1999, pp. 203-207
Role of oxygen vacancy defect states in the n-type conduction of beta-Ga2O3
Authors: Hajnal, Z Miro, J Kiss, G Reti, F Deak, P Herndon, RC Kuperberg, JM
Citation: Z. Hajnal et al., Role of oxygen vacancy defect states in the n-type conduction of beta-Ga2O3, J APPL PHYS, 86(7), 1999, pp. 3792-3796
Impedance spectroscopic study of beta-Ga2O3/O-2 interaction
Authors: Kiss, G Perczel, IV Fleischer, M Reti, F Meixner, H Giber, J
Citation: G. Kiss et al., Impedance spectroscopic study of beta-Ga2O3/O-2 interaction, J ELCHEM SO, 146(6), 1999, pp. 2357-2359
Controlled electrical conductivity in SnO2 thin films by oxygen or hydrocarbon assisted atomic layer epitaxy
Authors: Utriainen, M Kovacs, K Campbell, JM Niinisto, L Reti, F
Citation: M. Utriainen et al., Controlled electrical conductivity in SnO2 thin films by oxygen or hydrocarbon assisted atomic layer epitaxy, J ELCHEM SO, 146(1), 1999, pp. 189-193
Risultati: 1-12 |