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Results: 1-10 |
Results: 10
Emission enhancement of GaN/AlGaN single-quantum-wells due to screening ofpiezoelectric field
Authors: Kinoshita, A Hirayama, H Riblet, P Ainoya, M Hirata, A Aoyagi, Y
Citation: A. Kinoshita et al., Emission enhancement of GaN/AlGaN single-quantum-wells due to screening ofpiezoelectric field, MRS I J N S, 5, 2000, pp. NIL_586-NIL_591
Investigations of optical and electrical properties of In-doped GaN films grown by gas-source molecular beam epitaxy
Authors: Shen, XQ Ramvall, P Riblet, P Aoyagi, Y Hosi, K Tanaka, S Suemune, I
Citation: Xq. Shen et al., Investigations of optical and electrical properties of In-doped GaN films grown by gas-source molecular beam epitaxy, J CRYST GR, 209(2-3), 2000, pp. 396-400
Optical properties of GaN quantum dots
Authors: Ramvall, P Riblet, P Nomura, S Aoyagi, Y Tanaka, S
Citation: P. Ramvall et al., Optical properties of GaN quantum dots, J APPL PHYS, 87(8), 2000, pp. 3883-3890
Improvements of the optical and electrical properties of GaN films by using in-doping method during growth
Authors: Shen, XQ Ramvall, P Riblet, P Aoyagi, Y
Citation: Xq. Shen et al., Improvements of the optical and electrical properties of GaN films by using in-doping method during growth, JPN J A P 2, 38(4B), 1999, pp. L411-L413
Comparison of optical properties between GaN and InGaN quantum wells
Authors: Riblet, P Hirayama, H Kinoshita, A Hirata, A Sugano, T Aoyagi, Y
Citation: P. Riblet et al., Comparison of optical properties between GaN and InGaN quantum wells, PHYS ST S-B, 216(1), 1999, pp. 287-290
Size-dependent optical nonlinearities in GaN quantum dots
Authors: Riblet, P Tanaka, S Ramvall, P Nomura, S Aoyagi, Y
Citation: P. Riblet et al., Size-dependent optical nonlinearities in GaN quantum dots, SOL ST COMM, 109(6), 1999, pp. 377-381
Exciton saturation in GaAs multiple quantum wells at room temperature
Authors: Miller, A Riblet, P Mazilu, M White, S Holden, TM Cameron, AR Perozzo, P
Citation: A. Miller et al., Exciton saturation in GaAs multiple quantum wells at room temperature, J APPL PHYS, 86(7), 1999, pp. 3734-3744
Effect of indium doping on the transient optical properties of GaN films
Authors: Kumano, H Hoshi, K Tanaka, S Suemune, I Shen, XQ Riblet, P Ramvall, P Aoyagi, Y
Citation: H. Kumano et al., Effect of indium doping on the transient optical properties of GaN films, APPL PHYS L, 75(19), 1999, pp. 2879-2881
Determination of photoluminescence mechanism in InGaN quantum wells
Authors: Riblet, P Hirayama, H Kinoshita, A Hirata, A Sugano, T Aoyagi, Y
Citation: P. Riblet et al., Determination of photoluminescence mechanism in InGaN quantum wells, APPL PHYS L, 75(15), 1999, pp. 2241-2243
Confinement induced decrease of the exciton-longitudinal optical phonon coupling in GaN quantum dots
Authors: Ramvall, P Tanaka, S Nomura, S Riblet, P Aoyagi, Y
Citation: P. Ramvall et al., Confinement induced decrease of the exciton-longitudinal optical phonon coupling in GaN quantum dots, APPL PHYS L, 75(13), 1999, pp. 1935-1937
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