Citation: E. Marin et al., Influence of carrier recombination on the thermodiffusion, thermoelastic and electronic strain photoacoustic signal generation mechanisms in semiconductors., ANAL SCI, 17, 2001, pp. S284-S287
Citation: E. Marin et al., On the surface characterization in semiconductor structures using the photoacoustic technique, ANAL SCI, 17, 2001, pp. S288-S290
Authors:
Riech, I
Gomez-Herrera, ML
Diaz, P
Mendoza-Alvarez, JG
Herrera-Perez, JL
Marin, E
Citation: I. Riech et al., Measurement of the Auger lifetime in GaInAsSb/GaSb heterostructures using the photoacoustic technique, APPL PHYS L, 79(7), 2001, pp. 964-966
Citation: E. Marin et al., On the photoacoustic characterization of semiconductors: Influence of carrier recombination on the thermodiffusion, thermoelastic and electronic strain signal generation mechanisms, PHYS ST S-A, 179(2), 2000, pp. 387-402
Authors:
Riech, I
Santana, G
Diaz, P
Morales-Acevedo, A
Marin, E
Vargas, H
Citation: I. Riech et al., On the use of the photoacoustic technique for monitoring the surface recombination velocity at SiN : H/Si interfaces, SEMIC SCI T, 14(6), 1999, pp. 543-548