Authors:
Jeng, SJ
Jagannathan, B
Rieh, JS
Johnson, J
Schonenberg, KT
Greenberg, D
Stricker, A
Chen, H
Khater, M
Ahlgren, D
Freeman, G
Stein, K
Subbanna, S
Citation: Sj. Jeng et al., A 210-GHz f(T) SiGeHBT with a non-self-aligned structure, IEEE ELEC D, 22(11), 2001, pp. 542-544
Citation: Js. Rieh et al., Temperature dependent minority electron mobilities in strained Si1-xGex (0.2 <= x <= 0.4) layers, IEEE DEVICE, 47(4), 2000, pp. 883-890