Authors: Ostroumova, EV Rogachev, AA

Citation: Ev. Ostroumova et Aa. Rogachev, The Auger transistor based on the Al-SiO2-n-Si heterostructure, APPL SURF S, 166(1-4), 2000, pp. 480-484

Authors: Rogachev, AA Kalganov, VD Mileshkina, NV Ostroumova, EV

Citation: Aa. Rogachev et al., The influence of strong electric field on the interface in the Al-SiO2-n-Si Auger transistor, MICROELEC J, 31(11-12), 2000, pp. 905-911

Authors: Rogachev, AA

Citation: Aa. Rogachev, Excitonic molecules trapped by quantum dots and isoelectronic impurities in many-valley semiconductors, SEMICONDUCT, 33(9), 1999, pp. 1024-1026

Authors: Ostroumova, EV Rogachev, AA

Citation: Ev. Ostroumova et Aa. Rogachev, High-frequency current instabilities in a silicon Auger transistor, SEMICONDUCT, 33(9), 1999, pp. 1027-1029