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Results: 3

Authors: Rohmfeld, S Hundhausen, M Ley, L Schulze, N Pensl, G
Citation: S. Rohmfeld et al., Isotope-disorder-induced line broadening of phonons in the raman spectra of SiC, PHYS REV L, 86(5), 2001, pp. 826-829

Authors: Schulze, N Barrett, DL Pensl, G Rohmfeld, S Hundhausen, M
Citation: N. Schulze et al., Near-thermal equilibrium growth of SiC by physical vapor transport, MAT SCI E B, 61-2, 1999, pp. 44-47

Authors: Rohmfeld, S Hundhausen, M Ley, L
Citation: S. Rohmfeld et al., Influence of stacking disorder on the Raman spectrum of 3C-SiC, PHYS ST S-B, 215(1), 1999, pp. 115-119
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