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Results: 1-10 |
Results: 10
The influence of polysilicon gate morphology on dopant activation and deactivation kinetics in deep-submicron CMOS transistors
Authors: Cubaynes, FN Stolk, PA Verhoeven, J Roozeboom, F Woerlee, PH
Citation: Fn. Cubaynes et al., The influence of polysilicon gate morphology on dopant activation and deactivation kinetics in deep-submicron CMOS transistors, MAT SC S PR, 4(4), 2001, pp. 351-356
Effect of heating ramp rates on transient enhanced diffusion in ion-implanted silicon
Authors: Mannino, G Stolk, PA Cowern, NEB de Boer, WB Dirks, AG Roozeboom, F van Berkum, JGM Woerlee, PH Toan, NN
Citation: G. Mannino et al., Effect of heating ramp rates on transient enhanced diffusion in ion-implanted silicon, APPL PHYS L, 78(7), 2001, pp. 889-891
High-value MOS capacitor arrays in ultradeep trenches in silicon
Authors: Roozeboom, F Elfrink, R Verhoeven, J van den Meerakker, J Holthuysen, F
Citation: F. Roozeboom et al., High-value MOS capacitor arrays in ultradeep trenches in silicon, MICROEL ENG, 53(1-4), 2000, pp. 581-584
Etching of deep macropores in 6 in. Si wafers
Authors: van den Meerakker, JEAM Elfrink, RJG Roozeboom, F Verhoeven, JFCM
Citation: Jeam. Van Den Meerakker et al., Etching of deep macropores in 6 in. Si wafers, J ELCHEM SO, 147(7), 2000, pp. 2757-2761
Role of self- and boron-interstitial clusters in transient enhanced diffusion in silicon
Authors: Mannino, G Cowern, NEB Roozeboom, F van Berkum, JGM
Citation: G. Mannino et al., Role of self- and boron-interstitial clusters in transient enhanced diffusion in silicon, APPL PHYS L, 76(7), 2000, pp. 855-857
Cluster ripening and transient enhanced diffusion in silicon
Authors: Cowern, NEB Mannino, G Stolk, PA Roozeboom, F Huizing, HGA van Berkum, JGM Cristiano, F Claverie, A Jaraiz, M
Citation: Neb. Cowern et al., Cluster ripening and transient enhanced diffusion in silicon, MAT SC S PR, 2(4), 1999, pp. 369-376
Energetics of self-interstitial clusters in Si
Authors: Cowern, NEB Mannino, G Stolk, PA Roozeboom, F Huizing, HGA van Berkum, JGM Cristiano, F Claverie, A Jaraiz, M
Citation: Neb. Cowern et al., Energetics of self-interstitial clusters in Si, PHYS REV L, 82(22), 1999, pp. 4460-4463
Robust giant magnetoresistance material system for magnetic sensors
Authors: Lenssen, KMH Kuiper, AET Roozeboom, F
Citation: Kmh. Lenssen et al., Robust giant magnetoresistance material system for magnetic sensors, J APPL PHYS, 85(8), 1999, pp. 5531-5533
Boride-enhanced diffusion in silicon: Bulk and surface layers
Authors: Cowern, NEB Theunissen, MJJ Roozeboom, F van Berkum, JGM
Citation: Neb. Cowern et al., Boride-enhanced diffusion in silicon: Bulk and surface layers, APPL PHYS L, 75(2), 1999, pp. 181-183
Influences on relaxation of exchange biasing in NiO/Ni66Co18Fe16 bilayers
Authors: van der Heijden, PAA Maas, TFMM Kools, JCS Roozeboom, F van der Zaag, PJ de Jonge, WJM
Citation: Paa. Van Der Heijden et al., Influences on relaxation of exchange biasing in NiO/Ni66Co18Fe16 bilayers, J APPL PHYS, 83(11), 1998, pp. 7207-7209
Risultati: 1-10 |