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Results: 1
Electron mobility models for 4H, 6H, and 3C SiC
Authors:
Roschke, M Schwierz, F
Citation:
M. Roschke et F. Schwierz, Electron mobility models for 4H, 6H, and 3C SiC, IEEE DEVICE, 48(7), 2001, pp. 1442-1447
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