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Results: 1-9 |
Results: 9
The role of nitrogen in the formation of luminescent silicon nanoprecipitates during heat treatment of SiO2 layers implanted with Si+ ions
Authors: Kachurin, GA Yanovskaya, SG Zhuravlev, KS Ruault, MO
Citation: Ga. Kachurin et al., The role of nitrogen in the formation of luminescent silicon nanoprecipitates during heat treatment of SiO2 layers implanted with Si+ ions, SEMICONDUCT, 35(10), 2001, pp. 1182-1186
Simulation of the alpha-annealing effect in apatitic structures by He-ion irradiation: Influence of the silicate/phosphate ratio and of the OH-/F- substitution
Authors: Soulet, S Carpena, J Chaumont, J Kaitasov, O Ruault, MO Krupa, JC
Citation: S. Soulet et al., Simulation of the alpha-annealing effect in apatitic structures by He-ion irradiation: Influence of the silicate/phosphate ratio and of the OH-/F- substitution, NUCL INST B, 184(3), 2001, pp. 383-390
Interaction of defects and metals with nanocavities in silicon
Authors: Williams, JS Ridgway, MC Conway, MJ Wong-Leung, J Zhu, XF Petravic, M Fortuna, F Ruault, MO Bernas, H Kinomura, A Nakano, Y Hayashi, Y
Citation: Js. Williams et al., Interaction of defects and metals with nanocavities in silicon, NUCL INST B, 178, 2001, pp. 33-43
Ion beam synthesis of CoSi2: Influence of surface kinetics on nucleation
Authors: Volkov, AE Ruault, MO Bernas, H Borodin, VA
Citation: Ae. Volkov et al., Ion beam synthesis of CoSi2: Influence of surface kinetics on nucleation, NUCL INST B, 178, 2001, pp. 327-330
Determination of the defect creation mechanism in fluoroapatite
Authors: Soulet, S Chaumont, J Krupa, JC Carpena, J Ruault, MO
Citation: S. Soulet et al., Determination of the defect creation mechanism in fluoroapatite, J NUCL MAT, 289(1-2), 2001, pp. 194-198
Direct observation of irradiation-induced nanocavity shrinkage in Si
Authors: Zhu, XF Williams, JS Conway, MJ Ridgway, MC Fortuna, F Ruault, MO Bernas, H
Citation: Xf. Zhu et al., Direct observation of irradiation-induced nanocavity shrinkage in Si, APPL PHYS L, 79(21), 2001, pp. 3416-3418
The influence of irradiation and subsequent annealing on Si nanocrystals formed in SiO2 layers
Authors: Kachurin, GA Yanovskaya, SG Ruault, MO Gutakovskii, AK Zhuravlev, KS Kaitasov, O Bernas, H
Citation: Ga. Kachurin et al., The influence of irradiation and subsequent annealing on Si nanocrystals formed in SiO2 layers, SEMICONDUCT, 34(8), 2000, pp. 965-970
Preferential amorphization and defect annihilation at nanocavities in silicon during ion irradiation
Authors: Williams, JS Zhu, XF Ridgway, MC Conway, MJ Williams, BC Fortuna, F Ruault, MO Bernas, H
Citation: Js. Williams et al., Preferential amorphization and defect annihilation at nanocavities in silicon during ion irradiation, APPL PHYS L, 77(26), 2000, pp. 4280-4282
Light particle irradiation effects in Si nanocrystals
Authors: Kachurin, GA Ruault, MO Gutakovsky, AK Kaitasov, O Yanovskaya, SG Zhuravlev, KS Bernas, H
Citation: Ga. Kachurin et al., Light particle irradiation effects in Si nanocrystals, NUCL INST B, 147(1-4), 1999, pp. 356-360
Risultati: 1-9 |