Authors:
Bourdelle, KK
Chen, YN
Ashton, RA
Rubin, LM
Agarwal, A
Morris, WH
Citation: Kk. Bourdelle et al., Evaluation of high dose, high energy boron implantation into Cz substratesfor epi-replacement in CMOS technology, IEEE DEVICE, 48(9), 2001, pp. 2043-2049
Authors:
Robertson, LS
Jones, KS
Rubin, LM
Jackson, J
Citation: Ls. Robertson et al., Annealing kinetics of {311} defects and dislocation loops in the end-of-range damage region of ion implanted silicon, J APPL PHYS, 87(6), 2000, pp. 2910-2913
Authors:
Robertson, LS
Law, ME
Jones, KS
Rubin, LM
Jackson, J
Chi, P
Simons, DS
Citation: Ls. Robertson et al., Correlation of end-of-range damage evolution and transient enhanced diffusion of boron in regrown silicon, APPL PHYS L, 75(24), 1999, pp. 3844-3846