Authors: Ruchhoeft, P Wolfe, JC

Citation: P. Ruchhoeft et Jc. Wolfe, Determination of resist exposure parameters in helium ion beam lithography: Absorbed energy gradient, contrast, and critical dose, J VAC SCI B, 18(6), 2000, pp. 3177-3180

Authors: Ruchhoeft, P Wolfe, JC

Citation: P. Ruchhoeft et Jc. Wolfe, Optimal strategy for controlling linewidth on spherical focal surface arrays, J VAC SCI B, 18(6), 2000, pp. 3185-3189

Authors: Ruchhoeft, P Colburn, M Choi, B Nounu, H Johnson, S Bailey, T Damle, S Stewart, M Ekerdt, J Sreenivasan, SV Wolfe, JC Willson, CG

Citation: P. Ruchhoeft et al., Patterning curved surfaces: Template generation by ion beam proximity lithography and relief transfer by step and flash imprint lithography, J VAC SCI B, 17(6), 1999, pp. 2965-2969

Authors: Kaesmaier, R Loschner, H Stengl, G Wolfe, JC Ruchhoeft, P

Citation: R. Kaesmaier et al., Ion projection lithography: International development program, J VAC SCI B, 17(6), 1999, pp. 3091-3097

Authors: Ruchhoeft, P Wolfe, JC Wasson, J Torres, J Wu, H Nounu, H Liu, N Herbordt, M Morgan, MD Tiberio, RC

Citation: P. Ruchhoeft et al., Fabrication of silicon stencil masks with vitreous carbon ion-absorbing coatings, J VAC SCI B, 16(6), 1998, pp. 3599-3601