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Results:
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Results: 8
Authors:
Osten, HJ
Knoll, D
Rucker, H
Citation: Hj. Osten et al., Dopant diffusion control by adding carbon into Si and SiGe: principles anddevice application, MAT SCI E B, 87(3), 2001, pp. 262-270
Authors:
Osten, HJ
Rucker, H
Liu, JP
Heinemann, B
Citation: Hj. Osten et al., Wider latitude for sophisticated devices by incorporating carbon into crystalline Si or SiGe, MICROEL ENG, 56(1-2), 2001, pp. 209-212
Authors:
Rucker, H
Heinemann, B
Kurps, R
Citation: H. Rucker et al., Nonequilibrium point defects and dopant diffusion in carbon-rich silicon -art. no. 073202, PHYS REV B, 6407(7), 2001, pp. 3202
Authors:
Casali, RA
Rucker, H
Methfessel, M
Citation: Ra. Casali et al., Interaction of vacancies with interstitial oxygen in silicon, APPL PHYS L, 78(7), 2001, pp. 913-915
Authors:
Rucker, H
Heinemann, B
Citation: H. Rucker et B. Heinemann, Tailoring dopant diffusion for advanced SiGe : C heterojunction bipolar transistors, SOL ST ELEC, 44(5), 2000, pp. 783-789
Authors:
Franz, M
Dombrowski, KF
Rucker, H
Dietrich, B
Pressel, K
Barz, A
Kerat, U
Dold, P
Benz, KW
Citation: M. Franz et al., Phonons in Ge1-xSix bulk crystals, PHYS REV B, 59(16), 1999, pp. 10614-10621
Authors:
Rucker, H
Heinemann, B
Ropke, W
Kurps, R
Kruger, D
Lippert, G
Osten, HJ
Citation: H. Rucker et al., Suppressed diffusion of boron and carbon in carbon-rich silicon (vol 73, pg 1682, 1998), APPL PHYS L, 75(1), 1999, pp. 147-147
Authors:
Rucker, H
Heinemann, B
Bolze, D
Kurps, R
Kruger, D
Lippert, G
Osten, HJ
Citation: H. Rucker et al., The impact of supersaturated carbon on transient enhanced diffusion, APPL PHYS L, 74(22), 1999, pp. 3377-3379
Risultati:
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