Authors:
Schaepkens, M
Rueger, NR
Beulens, JJ
Li, X
Standaert, TEFM
Matsuo, PJ
Oehrlein, GS
Citation: M. Schaepkens et al., Effect of capacitive coupling on inductively coupled fluorocarbon plasma processing, J VAC SCI A, 17(6), 1999, pp. 3272-3280
Authors:
Rueger, NR
Doemling, MF
Schaepkens, M
Beulens, JJ
Standaert, TEFM
Oehrlein, GS
Citation: Nr. Rueger et al., Selective etching of SiO2 over polycrystalline silicon using CHF3 in an inductively coupled plasma reactor, J VAC SCI A, 17(5), 1999, pp. 2492-2502
Authors:
Schaepkens, M
Standaert, TEFM
Rueger, NR
Sebel, PGM
Oehrlein, GS
Cook, JM
Citation: M. Schaepkens et al., Study of the SiO2-to-Si3N4 etch selectivity mechanism in inductively coupled fluorocarbon plasmas and a comparison with the SiO2-to-Si mechanism, J VAC SCI A, 17(1), 1999, pp. 26-37