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Results: 1-11 |
Results: 11
SI INTRALAYERS AT GAAS ALAS AND GAAS/GAAS JUNCTIONS - POLAR VERSUS NONPOLAR INTERFACES/
Authors: MORENO M YANG H HORICKE M ALONSO M MARTINGAGO JA HEY R HORN K SACEDON JL PLOOG KH
Citation: M. Moreno et al., SI INTRALAYERS AT GAAS ALAS AND GAAS/GAAS JUNCTIONS - POLAR VERSUS NONPOLAR INTERFACES/, Physical review. B, Condensed matter, 57(19), 1998, pp. 12314-12323
EVIDENCE OF PURE DIFFUSION PROCESS DURING GROWTH OF GOLD-FILMS
Authors: OLIVA AI SACEDON JL ANGUIANO E AGUILAR M AZNAREZ JA MENDEZ JA
Citation: Ai. Oliva et al., EVIDENCE OF PURE DIFFUSION PROCESS DURING GROWTH OF GOLD-FILMS, Surface science, 417(1), 1998, pp. 1139-1142
STM STUDIES OF THE GROWTH OF THE SI CU(110) SURFACE ALLOY/
Authors: POLOP C SACEDON JL MARTINGAGO JA
Citation: C. Polop et al., STM STUDIES OF THE GROWTH OF THE SI CU(110) SURFACE ALLOY/, Surface science, 404(1-3), 1998, pp. 245-248
MORPHOLOGY OF THIN SB LAYERS GROWN ON SI(111)7X7 AT ROOM-TEMPERATURE
Authors: CUBERES MT ASCOLANI H MORENO M SACEDON JL
Citation: Mt. Cuberes et al., MORPHOLOGY OF THIN SB LAYERS GROWN ON SI(111)7X7 AT ROOM-TEMPERATURE, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 14(3), 1996, pp. 1655-1659
ORDER AT THE BOUNDARIES OF PHASE-SHIFTED 7X7 DOMAINS ON SI(111)
Authors: CUBERES MT SACEDON JL
Citation: Mt. Cuberes et Jl. Sacedon, ORDER AT THE BOUNDARIES OF PHASE-SHIFTED 7X7 DOMAINS ON SI(111), Journal of physics. Condensed matter, 8(45), 1996, pp. 8743-8751
PHOTON-ASSISTED FIELD ELECTRON-EMISSION FROM SIO2 SI SUBSTRATES/
Authors: JIMENEZ I SACEDON JL
Citation: I. Jimenez et Jl. Sacedon, PHOTON-ASSISTED FIELD ELECTRON-EMISSION FROM SIO2 SI SUBSTRATES/, Applied physics letters, 68(25), 1996, pp. 3602-3604
REACTIVITY AT THE AL SI3N4 INTERFACES
Authors: AVILA J SACEDON JL
Citation: J. Avila et Jl. Sacedon, REACTIVITY AT THE AL SI3N4 INTERFACES, Applied physics letters, 66(6), 1995, pp. 757-759
SI-INDIFFUSION AND O-OUTDIFFUSION PROCESSES AT SI SIO2/GAAS-OXIDES/GAAS STRUCTURES - IMPLICATIONS IN SIO2 FORMATION AND GAAS REGROWTH/
Authors: JIMENEZ I SACEDON JL
Citation: I. Jimenez et Jl. Sacedon, SI-INDIFFUSION AND O-OUTDIFFUSION PROCESSES AT SI SIO2/GAAS-OXIDES/GAAS STRUCTURES - IMPLICATIONS IN SIO2 FORMATION AND GAAS REGROWTH/, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 12(6), 1994, pp. 3095-3102
GAAS FORMATION BY REDUCTION OF AS2O3 AND GA2O3 AT SIO2 GAAS OXIDES/GAAS INTERFACES/
Authors: JIMENEZ I MORENO M MARTINGAGO JA ASENSIO MC SACEDON JL
Citation: I. Jimenez et al., GAAS FORMATION BY REDUCTION OF AS2O3 AND GA2O3 AT SIO2 GAAS OXIDES/GAAS INTERFACES/, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 12(4), 1994, pp. 1170-1175
SIO2 GROWTH ON GAAS BY REDUCTION OF GAAS OXIDES - SEPARATION OF STOICHIOMETRIC CHANGES FROM SIO2 GAAS BAND-LINEUP EFFECTS/
Authors: JIMENEZ I PALOMARES FJ SACEDON JL
Citation: I. Jimenez et al., SIO2 GROWTH ON GAAS BY REDUCTION OF GAAS OXIDES - SEPARATION OF STOICHIOMETRIC CHANGES FROM SIO2 GAAS BAND-LINEUP EFFECTS/, Physical review. B, Condensed matter, 49(16), 1994, pp. 11117-11126
EFFECTS OF THERMAL NITRIDATION ON THE RADIATION HARDNESS OF THE SIO2 SI INTERFACE/
Authors: DECASTRO AJ FERNANDEZ M SACEDON JL
Citation: Aj. Decastro et al., EFFECTS OF THERMAL NITRIDATION ON THE RADIATION HARDNESS OF THE SIO2 SI INTERFACE/, Journal of applied physics, 73(11), 1993, pp. 7465-7470
Risultati: 1-11 |