SI-INDIFFUSION AND O-OUTDIFFUSION PROCESSES AT SI SIO2/GAAS-OXIDES/GAAS STRUCTURES - IMPLICATIONS IN SIO2 FORMATION AND GAAS REGROWTH/

Authors
JIMENEZ I SACEDON JL
Citation
I. Jimenez et Jl. Sacedon, SI-INDIFFUSION AND O-OUTDIFFUSION PROCESSES AT SI SIO2/GAAS-OXIDES/GAAS STRUCTURES - IMPLICATIONS IN SIO2 FORMATION AND GAAS REGROWTH/, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 12(6), 1994, pp. 3095-3102
Citations number
27
Categorie Soggetti
Physics, Applied
Journal title
Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena → ACNP
ISSN journal
10711023
Volume
12
Issue
6
Year of publication
1994
Pages
3095 - 3102
Database
ISI
SICI code
1071-1023(1994)12:6<3095:SAOPAS>2.0.ZU;2-#