Citation: Ml. Sadowski et al., COMMENT ON MAGNETOSPECTROSCOPY OF BOUND PHONONS IN HIGH-PURITY GAAS, Physical review letters, 81(13), 1998, pp. 2834-2834
Authors:
ALAUSE H
SKIERBISZEWSKI C
DYAKONOV M
KNAP W
SADOWSKI ML
HUANT S
YOUNG J
KHAN MA
CHEN Q
Citation: H. Alause et al., CONTACTLESS CHARACTERIZATION OF 2D-ELECTRONS IN GAN ALGAN HFETS/, DIAMOND AND RELATED MATERIALS, 6(10), 1997, pp. 1536-1538
Authors:
ALAUSE H
KNAP W
AZEMA SC
BLUET JM
SADOWSKI ML
HUANT S
YOUNG J
KHAN MA
CHEN Q
SHUR M
Citation: H. Alause et al., OPTICAL AND ELECTRICAL-PROPERTIES OF 2-DIMENSIONAL ELECTRON-GAS IN GAN ALGAN HETEROSTRUCTURES/, Materials science & engineering. B, Solid-state materials for advanced technology, 46(1-3), 1997, pp. 79-83
Authors:
KNAP W
CONTRERAS S
ALAUSE H
SKIERBISZEWSKI C
CAMASSEL J
DYAKONOV M
ROBERT JL
YANG J
CHEN Q
KHAN MA
SADOWSKI ML
HUANT S
YANG FH
GOIRAN M
LEOTIN J
SHUR MS
Citation: W. Knap et al., CYCLOTRON-RESONANCE AND QUANTUM HALL-EFFECT STUDIES OF THE 2-DIMENSIONAL ELECTRON-GAS CONFINED AT THE GAN ALGAN INTERFACE/, Applied physics letters, 70(16), 1997, pp. 2123-2125
Citation: Ml. Sadowski et M. Grynberg, EXPERIMENTAL-EVIDENCE FOR THE SPATIAL CORRELATION OF CHARGED EL2(+) DEFECTS AND ACCEPTORS IN SEMIINSULATING GAAS, Acta Physica Polonica. A, 87(1), 1995, pp. 133-136
Citation: Ml. Sadowski et al., SHALLOW DONORS AS A GAUGE OF THE FLUCTUATING ELECTRIC-FIELDS IN A SEMICONDUCTOR, Solid state communications, 93(5), 1995, pp. 399-403
Citation: Ml. Sadowski et M. Grynberg, EFFECTS OF THE POPULATION OF LOCALIZED LEVELS ON SHALLOW DONOR TRANSITIONS IN SEMIINSULATING GAAS, Journal of physics and chemistry of solids, 56(3-4), 1995, pp. 619-624