Authors: CHEN Q YANG JW GASKA R KHAN MA SHUR MS SULLIVAN GJ SAILOR AL HIGGINGS JA PING AT ADESIDA I

Citation: Q. Chen et al., HIGH-POWER MICROWAVE 0.25-MU-M GATE DOPED-CHANNEL GAN ALGAN HETEROSTRUCTURE FIELD-EFFECT TRANSISTOR/, IEEE electron device letters, 19(2), 1998, pp. 44-46