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PHOTOELECTRIC AND PHOTOMAGNETIC PROPERTIES OF THE GAPLESS SEMICONDUCTOR CDXHG1-XTE IN THE INFRARED AND MILLIMETER SPECTRAL REGIONS WHEN AN ENERGY-GAP IS OPENED
Authors: GASANZADE SG SALKOV EA SHEPELSKII GA
Citation: Sg. Gasanzade et al., PHOTOELECTRIC AND PHOTOMAGNETIC PROPERTIES OF THE GAPLESS SEMICONDUCTOR CDXHG1-XTE IN THE INFRARED AND MILLIMETER SPECTRAL REGIONS WHEN AN ENERGY-GAP IS OPENED, Semiconductors, 31(1), 1997, pp. 29-35
LOW-TEMPERATURE MOTION OF DISLOCATIONS AS A POSSIBLE MECHANISM OF FORMATION OF ONE-DIMENSIONAL ELECTRONIC-STRUCTURES IN SEMICONDUCTOR CRYSTALS
Authors: TARBAEV NI SHEPELSKII GA SALKOV EA
Citation: Ni. Tarbaev et al., LOW-TEMPERATURE MOTION OF DISLOCATIONS AS A POSSIBLE MECHANISM OF FORMATION OF ONE-DIMENSIONAL ELECTRONIC-STRUCTURES IN SEMICONDUCTOR CRYSTALS, JETP letters, 66(10), 1997, pp. 675-680
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