Authors:
RENTZSCH R
IONOV AN
REICH C
SANDOW B
STEFANYI P
FOZOONI P
LEA MJ
Citation: R. Rentzsch et al., QUANTUM INTERFERENCE AND SPILL EFFECTS IN THE VARIABLE-RANGE-HOPPING MAGNETORESISTANCE OF HEAVILY-DOPED SEMICONDUCTORS - COMPARISON BETWEENSI, GE, CDTE AND GAAS, Physica status solidi. b, Basic research, 205(1), 1998, pp. 173-177
Authors:
RENTZSCH R
IONOV AN
REICH C
MULLER M
SANDOW B
FOZOONI P
LEA MJ
GINODMAN V
SHLIMAK I
Citation: R. Rentzsch et al., THE SCALING BEHAVIOR OF THE METAL-INSULATOR-TRANSITION OF ISOTOPICALLY ENGINEERED NEUTRON-TRANSMUTATION DOPED GERMANIUM, Physica status solidi. b, Basic research, 205(1), 1998, pp. 269-273
Authors:
SANDOW B
GLOOS K
NAIDYUK Y
RENTZSCH R
IONOV AN
Citation: B. Sandow et al., TUNNELING SPECTROSCOPY NEAR THE METAL-INSULATOR-TRANSITION, Physica status solidi. b, Basic research, 205(1), 1998, pp. 281-285
Authors:
RENTZSCH R
IONOV AN
SANDOW B
STEFANYI P
FOZOONI P
LEA MJ
Citation: R. Rentzsch et al., ON THE SIGN AND TEMPERATURE-DEPENDENCE OF MAGNETORESISTANCE IN VARIABLE-RANGE-HOPPING IN HIGHLY COMPENSATED N-GAAS - THE ROLE OF SPIN-EFFECTS, Physica status solidi. b, Basic research, 203(2), 1997, pp. 487-499
Authors:
RENTZSCH R
SANDOW B
IONOV AN
AGRINSKAYA NV
LEA MJ
FOZOONI P
Citation: R. Rentzsch et al., ON THE NEGATIVE MAGNETORESISTANCE PUZZLE AT VARIABLE-RANGE-HOPPING ATLOW-TEMPERATURES, Czechoslovak journal of Physics, 46, 1996, pp. 2447-2448